雷射輔助噴射式大氣電漿鍍製微米級鎵摻雜氧化鋅薄膜導線研究及電漿驟冷效應分析與改良

Transparent and Conductive Ga-doped ZnO Micro-patterns Fabricated by Laser-assisted Atmospheric Pressure Plasma Jet and Analysis of Air-quench Effect in the Plasma Jet

黃京淇(Jing-Chi Huang)

指導教授 ： 莊嘉揚

國立臺灣大學/工學院/機械工程學研究所/碩士(2019年)

https://doi.org/10.6342/NTU201902556

摘要

本研究以噴射式大氣電漿(Atmospheric pressure plasma jet, APPJ)鍍膜系統鍍製GZO鎵摻雜氧化鋅薄膜，APPJ以在常壓環境運作且能鍍製出與真空製程品質相近的透明導電薄膜為主要優勢，除去真空腔體之限制後儀器維護較容易且維修成本也較低。鍍製透明導電薄膜於軟性基材是許多團隊爭相研究的題目，由於軟性基材無法承受高溫鍍膜環境衍生許多低溫鍍膜製程，其中雷射輔助製程能夠給予基材局部高能量使其易於薄膜生長，並藉此除去高溫基板之需求，且更有機會在軟性基材上鍍製導電薄膜。因此，本研究結合大氣電漿鍍膜系統與雷射局部加熱特性鍍製微米級透明薄膜導線於玻璃基材，同時我們討論改變雷射功率、掃描次數、聚焦位置等參數對於導線電學性質、光學性質的影響。接著比較各種參數樣本與標準大氣電漿鍍膜樣本之各項性質，最後鍍製出寬度420μm之導線且電阻率相近於小面積("50 mm ×50 mm" )標準鍍膜樣本。
本研究同時討論了噴射式大氣電漿之驟冷效應。APPJ系統因於常壓運作，鍍膜環境有可能受到大氣成分的影響，此影響可能減少氧化氮之生成導致電漿活性降低並間接影響鍍膜品質。首先我們證實了APPJ系統的確受到大氣影響，接著我們設計一預防大氣侵入之金屬平板並安裝至電漿噴嘴，我們比較安裝平板前後之樣本電學性質、光學性質及討論其影響，最後我們歸納出噴嘴安裝平板後的鍍膜樣本載子濃度有了大幅之提升，此主導機制確實是來自於加裝平板後杜絕大氣侵入，並造就良好的電漿活性與鍍膜環境。

關鍵字

噴射式大氣電漿 ； 鎵摻雜氧化鋅 ； 雷射輔助製程 ； 驟冷效應

並列摘要

In this study, we use APPJ (Atmospheric Pressure Plasma Jet) to deposit GZO (Gallium doped Zinc Oxdie) films. Advantages of our APPJ system is free of vacuum chamber and is able to deposit high quality transparent conductive thin films in open air. Besides these advantages, it is also cost-effective and easier to maintain the system. The research for depositing thin films on flexible substrate, such as Organic Light-Emitting Diode, has increased in recent years. However, most of deposition method requires heating or high temperature environment that is unsuitable for flexible substrates. Laser-assited system locally heats substrates, which prevents the deformation of flexible substrates and provides a better deposition condition. In this thesis, we successfully combine laser-assited system and APPJ system to deposit micron width transparent conductive thin films on glass substrate. After that, we discuss the influence on thin film properties with variations in laser power, scanning times, and focused point. At the end of this part, thin film is deposited with specific parameters and that is comparable to one deposited by APPJ with hot plate in resistivity.
Furthermore, we also discuss the air-quench effect of APPJ while depositing. Recent research shows that the invasion of air may react with plasma and affect the activation of plasma. At first, we confirm the plasma reaction in APPJ by optical emission spectropy, then we design a stainless plate that set on plasma nozzle with stop screws to prevent the invasion of air while depositing. We find that both resistivity and carrier concentration are significant improved after ther plate is set on. At last, we summarize the improvement of electronic property is attributable to the reduction of air invasion instead of the change in temperature and the design of stainless plate truely enhances the reaction of plasma.

並列關鍵字

Atmospheric pressure plasma jet ； Gallium doped zinc oxide ； Laser-assisted ； Air-quench

參考文獻

[1] B. Y. Oh et al., “Transparent conductive Al-doped ZnO films for liquid crystal displays Transparent conductive Al-doped ZnO films for liquid crystal displays,” J. Appl. Phys., vol. 99, no. 12, pp. 1–4, 2006.

[2] J. S. Park et al., “Thin film encapsulation for flexible AM-OLED: A review,” Semicond. Sci. Technol., vol. 26, no. 3, pp. 1–8, 2011.

[3] J. L.Vossen, “Transparent Conducting Films,” Phys. Thin Film, vol. 9, pp. 1–64, 1977.

[4] G. Gonçalves et al., “Influence of post-annealing temperature on the properties exhibited by ITO, IZO, and GZO thin films,” Thin Solid Film, vol. 515, no. 24, pp. 8562–8566, 2007.

[5] F. M. Amanullah et al., “Thickness dependence of electrical and structural properties of FTO films,” Crvst. Res. Technol., vol. 26, no. 8, pp. 1099–1105, 1991.