Class E功率放大器和可調偏壓式功率放大器以及變壓器結合放大器

Research of CMOS Class E Power Amplifier, Adaptive Bias Power Amplifier and Transformer Combined Power Amplifier

簡元德(Yuan-Te Chien)

指導教授 ： 黃天偉

國立臺灣大學/電機資訊學院/電信工程學研究所/碩士(2012年)

https://doi.org/10.6342/NTU.2012.10201

摘要

這幾年隨著無線通訊的成長，為了有更高的傳輸速率，更遠的傳輸距離，或者更可靠的傳輸方式，需要一個可以整合的解決方法。而功率放大器便是其中一個重要的瓶頸。傳統上，3-5族高電子移動率電晶體，例如砷化鎵，擁有高輸出功率以及高功率附加效率。使用互補式金氧半電晶體製作功率放大器，有其一定的限制跟困難，但為了系統整合以及小尺寸，製作於互補式金氧半導體製程上的功率放大器日漸重要，也引起了越多人的研究。
在本論文中，我們設計了兩顆操作於Class E mode 的功率放大器使用的是TSMC 180nm CMOS process. 第一顆功率放大器有8-dB的增益, 40%的功率附加效益還有15dBm的飽和輸出功率在5.8GHz。 第二顆功率放大器有超過20dB的增益，50%功率附加效益還有20dBm的飽和輸出功率在2.4GHz。 第三顆電路為自我調整偏壓是功率放大器，使用的是TSMC 180nm CMOS process。 第四顆電路為使用變壓器結合的功率放大器，使用的也是TSMC 180nm CMOS process。

關鍵字

金氧半場效電晶體 ； 功率放大器 ； 自調偏壓式

並列摘要

The growth in wireless communication has strong demands in integrated solution to have faster transmission speed, more distance, and more reliable transmission. Power amplifier is one of the bottlenecks. Traditionally, Ⅲ-Ⅴ high electron mobility transistor, ex. GaAs has the high output power and high power added efficiency. It has certain restrictions and difficulties about using complementary metal-oxide semiconductor to design the power amplifiers. For the reason of system integration and small area to cost down, the fabrication of power amplifiers using complementary metal-oxide semiconductor arises attention gradually and more and more researchers study relevant topics.
In this thesis, we design two circuits in Class E Power Amplifier operation using 180nm CMOS processes. The first power amplifier achieves 8-dB small signal gain, 40% PAE, and 15 dBm output saturation power at 5.8GHz. The second power amplifier achieves 20-dB small signal gain, 50% PAE, and 20 dBm output saturation power at 2.4GHz. The third circuit is Adaptive Bias Power Amplifier using 180nm CMOS processes. The fourth circuit is Transformer Combine Power Amplifier using 180nm CMOS processes.

並列關鍵字

CMOS Transistor ； Power Amplifier ； Adaptive Bias

參考文獻

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