電漿輔助原子層沉積之氮化鋁鎵發光二極體技術發展

The Development of AlN/GaN Light Emitting Diode Grown by Plasma-Enhanced Atomic Layer Deposition

唐洪智(Hong-Chih Tang)

指導教授 ： 彭隆瀚

國立臺灣大學/電機資訊學院/光電工程學研究所/碩士(2015年)

https://doi.org/10.6342/NTU.2015.01129

摘要

本論文主要探討原子層沉積系統以及其發光二極體元件應用分析。內容分為兩部分，第一部分為電漿輔助型原子層沉積系統之機台校正及材料分析，第二部分為利用電漿輔助型原子層沉積系統進行氮化鋁鎵發光二極體之製作及量測。
首先，本文針對電漿輔助型原子層沉積系統做機台操作之校正，並對其沉積材料利用橢圓偏振技術和表面輪廓儀進行成長速率之校正以及XPS量測技術做材料特性分析。結果顯示，本實驗室成功利用電漿輔助型原子層沉積系統沉積出氧化鋅、氧化鉿、氧化鋁、氧化鎵四種氧化物，以及氮化鋁、氮化鎵兩種氮化物。
吾人再以電漿輔助型原子層沉積系統進行氮化物發光二極體之製作，並且量測其電壓-電流特性、電激發光頻譜。利用不同主動層厚度(2/12/2 nm、2/18/2 nm、2/24/2 nm、2/9/2/9/2 nm、2/12/2/12/2 nm)發現特定厚度將會影響其電性以及光性，其中以2/12/2/12/2 nm 之主動層厚度有最佳之光強度及最高之耐壓，再綜合比較頻譜可知在相同電流(45mA)注入下，頻譜中心波長會有些許藍移(Blue shift)。

關鍵字

原子層沉積 ； 氮化鎵

並列摘要

In this thesis, we present the operational procedure of plasma enhanced atomic layer deposition (PE-ALD) system and the growth, analysis, fabrication, characterization of Si-based nitride light emitting devices. The following instrument of X-ray photoelectron spectroscope (XPS), ellipsometry, and surface profiler were used to characterize the thickness, growth rate and composition of the materials grown by the PE-ALD system.
From the data analysis made on the ellipsometry and surface profiler measurement, we identified the materials growth rate under ALD mode correctly. From the XPS data analysis, we identified the material’s binding energy position. From above analysis, we have studied four oxide material including ZnO, HfO2, Al2O3, Ga2O3 and two nitride materials including AlN, GaN from our PE-ALD system.
Si-based nitride light-emitting devices base upon the plasma enhancement ALD grown different active layer nitride were further fabricated and characterized. From the current-voltage, electroluminescene (EL), we prove that double layer nitride light-emitting devices can be operated with higher forward voltage and gave more light-emitting intensity. Based on the normalized EL spectrum, we found that different active layer thichnesses light-emitting devices will cause blue-shift.

並列關鍵字

PEALD ； GaN

參考文獻

E.Fred Schubert (2006) Light-Emitting Diodes. New York,Cambridge University Press

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