蕭基二極體與碳化矽金氧半場效電晶體之模擬與設計

Simulation and Design of Schottky Diode and 4H-SiC MOSFET

王惠萱(Hui-Hsuan Wang)

指導教授 ： 劉致為

國立臺灣大學/電機資訊學院/電子工程學研究所/碩士(2012年)

https://doi.org/10.6342/NTU.2012.10462

摘要

電晶體的微縮已經被用來改善金屬氧化層半導體場效電晶體的性能至少二十年，由於元件微縮已經達到其物理極限，莫爾定律也已經不再適用，如何開發利用其他領域的應用是我們能繼續發展的方向之一。由於全球暖化及綠色能源意識抬頭的影響，電子電力元件漸漸受到各國政府重視，除了在電路上改進之外，元件的特性也是可以改進的方向。

本篇論文中，第一部分為蕭基二極體的研究。由於傳統蕭基二極體之結構使得元件操作在反向偏壓時，因為內部電場過大而導致其崩潰電壓降低。因此，我們設計模擬trench oxide結構的蕭基二極體，使其提升崩潰電壓。第二部分為4H-碳化矽垂直式金氧半場效電晶體，我們也設計了垂直漂浮島嶼金氧半場效電晶體 (VFLIMOSFET)結構，相較於傳統結構漂浮島嶼金氧半場效電晶體(FLIMOSFET)具有承受較大偏壓的能力。相較於傳統結構super-junction MOSFET具有較容易的製程和較寬裕的條件以提升崩潰電壓。

關鍵字

蕭基二極體 ； 4H-碳化矽 ； 崩潰電壓 ； 垂直式金氧半場效電晶體 ； 漂浮島嶼金氧半場效電晶體 ； super-junction 金氧半場效電晶體

並列摘要

Transistor scaling down has been performed in driving CMOS performance improvement for past two decades. By approaching the physical limits, “more than Moore” is a new path to the next decades and application requirement and customer needs will determine which technology is best suited. Furthermore, as the global warming and environmental protection issue getting much attention from the government around the world, the power device is becoming more important for the future green energy application.
In this thesis, the first part is study of Schottky diode. The conventional Schottky diodes suffer from high electric field in the device and result in low breakdown voltage due to their structures when they are biased in a reverse condition. Thus, we design a trench oxide structure to enhance the breakdown voltage.
The second part is study of 4H-SiC VDMOSFET, we also design a VFLIMOSFET structure which offers higher breakdown voltage than conventional FLIMOSFET, and has easier processes and better conditions to achieve high breakdown voltage than conventional super-junction MOSFET.

並列關鍵字

Schottky diode ； 4H-SiC ； breakdown voltage ； VDMOSFET ； FLIMOSFET ； super-junction MOSFET

參考文獻

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