部分解離絕緣體上矽金氧半元件模型考慮
背閘極偏壓效應之直流分析

本篇論文探討了部分解離絕緣體上矽N型金氧半元件模型考慮背閘極偏壓效應之直流分析。由於潛埋氧化層的結構，部分解離絕緣體上矽金氧半元件的行為在加上背閘極偏壓效應後將會大大地不同於沒有加上背閘極偏壓的時候。第一章先簡介絕緣體上矽金氧半元件及其元件之特性，並且比較部分解離絕緣體上矽和完全解離絕緣體上矽之間的差異。第二章說明了考慮正背閘極偏壓效應的部分解離絕緣體上矽N型金氧半元件飽和區電流傳導機制與等效模型。第三章對於部分解離絕緣體上矽N型金氧半元件在飽和區之背閘極偏壓效應與相關交互作用進行探討。第四章則是結論及未來展望。

關鍵字

絕緣體上矽；閘極偏壓效應

並列摘要

The thesis reports DC analysis of PD SOI NMOS device considering back gate bias effect. Due to the buried oxide structure, the back gate bias effect of the PD SOI CMOS devices may be quite different from the devices with no back-gate bias. Chapter 1 gives a brief introduction about SOI CMOS devices and the scaling trends, including the comparison of the difference between the PD SOI and the FD SOI CMOS devices. Chapter 2 describes current conduction mechanism and equivalent circuit of the PD SOI NMOS device in saturation region considering the positive back gate bias effect. Chapter 3 discusses some relative effect of the PD SOI NMOS device in saturation region considering the back gate bias effect. Chapter 4 is conclusion and future work.

並列關鍵字

SOI ； Back Gate Bias Effect

參考文獻

[3] J.Y. Choi, L.G. Fossum, “Analysis and Control of Floating-Body Bipolar Effects in Fully Depleted Submicrometer SOI MOSFET’s,” IEEE Trans. Electron Devices, Vol.ED-38, p.1384, June 1991.

[4] J.Y. Choi, R.Sundaresan, J.G. Fossum, “Monitoring Hot-electron-Induced Degradation of Floating-Body SOI MOSFET’s,” IEEE Electron Device Letters, Vol.11, p.156, April 1990.

[5] J.P. Colinge, “Reduction of Kink Effect in Thin-Film SOI MOSFET’s,” IEEE Electron Device Letters, Vol.EDL-9, p.97, Feb. 1988.

[8] James B. Kuo, “SPICE Compact Modeling of PD-SOI CMOS Devices,” HKEDM Dig., 2000.

[11] YG Chen, JB Kuo, Z Yu, RW Dutton,’’An analytical drain current model for short-channel fully-depleted ultrathin silicon-on-insulator NMOS devices,’’ Solid-State Electronics, 1995

國際替代計量

部分解離絕緣體上矽金氧半元件模型考慮背閘極偏壓效應之直流分析

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