- 學位論文
噴射式大氣電漿系統之退火效應研究與鍍製軟性基材之初步測試
Annealing Effect of APPJ System and Preliminary Test of Depositing Transparent Conductive Films on Elastic Substrate
摘要
目前透明導電薄膜材料以銦錫氧化物（Indium Tin Oxide, ITO）為主流，但銦屬於稀有金屬，其價格日益攀升，因此研究人員積極尋找替代材料，鎵摻雜氧化鋅（Gallium-doped Zinc Oxide, GZO）為其中之一。本研究使用直流脈衝電源產生之噴射式大氣電漿（Atmospheric Pressure Plasma Jet, APPJ）鍍製GZO薄膜，優點是免去高昂的真空腔體費用，且能夠透過小面積漸進式的掃描將薄膜鍍製在大面積基板上。 本研究針對使用大氣電漿技術常常會遇到的退火問題做深入的討論，我們觀察到在工研究的大氣電漿系統鍍製薄膜時，會有退火的情況發生，其原因是由於鍍製薄膜的過程基板必須維持在180度，其溫度促進退火的產生。而在台大的大氣電漿系統中鍍製薄膜，退火的影響卻近乎沒有，因此我們深入研究台大大氣電漿系統的退火效應。 我們對台大系統鍍製的薄膜進行不同溫度的退火，發現退火溫度300度以下電學性質變化很小，而350度以上則變化劇烈，因此我們定義300度為台大系統標準製程下的臨界溫度。接著我們藉由改變載氣流量鍍製降低膜厚的試片，接著進行不同溫度的退火，發現降低膜厚後，退火的臨界溫度下降至250度我們推測膜厚的變化是造成工研院系統與台大系統不同的一個原因。而退火對薄膜最主要的影響是降低氧空缺與提高化學吸附氧的濃度，進而惡化薄膜的電學性質。 接著我們使用田口法的概念設計出九組實驗，研究如何能在降低工作溫度的同時，片電阻值、穿透度與霧度依然維持再一定的水平。我們選定的控制因子為掃描速度、工作電壓以及載氣流量，經過電學性質與穿透度的量測與分析，得知掃描速度越快基板溫度越低，載氣流量在100 sccm時片電阻值表現最差而200 sccm時霧度表現最差，因此載氣流量150 sccm為較佳的選擇。至於工作電壓在120 V到160 V的範圍內，對薄膜的性質影響不大。
並列摘要
Nowadays, ITO is the first priority chosen material for transparent conductive thin films. However, because Indium is a rare metal which cost more and more, many researchers are intended to find a substitute materials. For example, GZO is one of them. In this study, we use APPJ（Atmospheric Pressure Plasma Jet） to deposit GZO films. The benefit of APPJ are lack of vacuum system and easy to deposit thin films on large area substrate by series of scanning. In the thesis, we discuss the problem, annealing effect, APPJ technique usually suffered. We notice that the annealing effect occurs when use the ITRI APPJ system. The reason is the high substrate temperature （180℃） in the period of depositing. However, we don’t notice the same effect in NTU APPJ system so we want to do further research about annealing effect in NTU APPJ. We conduct annealing test of various temperature for NTU APPJ films. Under 300℃, the sheet resistance is slightly changed while there is tremendous change above 350℃. Then we define 300℃ is the critical temperature in NTU APPJ. In order to compare NTU and ITRI APPJ, we adjust the carrier gas flow rate to deposit GZO films with smaller thickness. Then do the same annealing test to these films. We find that the critical temperature decreases to 250℃. This is a reason of difference between NTU and ITRI. We also use the Taguchi method for designing experiment in order to study how to decrease the substrate temperature when depositing and maintain good sheet resistance and transmittance in the same time. We choose scanning speed, working voltage and carrier gas flow rate as the controlled factor. By some measurement and analysis for electrical properties and transmittance. We find that the substrate temperature decreases by higher scanning speed. In situation of flow rate of carrier gas in 100 sccm, the sheet resistance is worst. Besides, flow rate in 200 sccm, the haze is worst. So 150 sccm is the proper flow rate to get good resistance and ok haze. For working voltage in the range of 120 V-160 V, there is no trend of electrical properties and transmittance.
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