- 學位論文
全噴墨鐵電材料有機記憶體元件之製作
Fabrication of All Ink-jet Printing Organic Ferroelectric Memory
摘要
由於有機材料具備可撓曲、容易在低溫下製作、低成本等等特色，有機電子技術被認為是未來電子產業的明日之星。在多樣化的有機材料中，鐵電材料可用來製作更多樣化的元件。 本論文使用可溶聚合物材料配合噴墨印刷製程，來製作有機薄膜電晶體(OTFTs)與鐵電電晶體(FeFET)。將鐵電材料加入電晶體之絕緣層中，將會使電晶體元件出現明顯的遲滯曲線。此特性可以做為記憶體元件的讀寫動作。進而達成可撓性非揮發記憶體元件(NVM)以及更加複雜的電路應用。 水溶性的導電材料(PEDOT/PSS)構成電晶體的電極部分，包含閘極、源極與汲極，使用自製噴墨系統可以在PI基板上噴印出約50微米的線寬，以及10微米以上的通道長度。接著使用鐵電材料P(VDF-TrFE) 與絕緣聚合物 PVP (polyvinylphenol) 作為雙層絕緣層結構。半導體層則選用高分子半導體材料P3HT。烘烤退火之後即完成全噴墨、全有機的電晶體元件製作。 經過一連串的測試，鐵電電晶體元件表現出非揮發性記憶體的特性。對於元件施加一高電壓再釋放之後，電晶體元件在零閘極電壓的情況下仍可保持開啟。反之施予一反方向偏壓則會表現低電流狀態。本論文所完成的記憶體元件，其1-0 電流比超過200倍，並且位元資料能儲存超過1000秒的時間。證明用作非揮發性記憶體的可撓性鐵電電晶體元件可以在全噴墨製程下成功製作。
並列摘要
The organic material has become an emerging research field because of its flexibility, low cost, and low temperature process capabilities. In variety of organic materials, ferroelectric polymer is interesting because of its highly polarized molecular structure. As the consequence, the ferroelectric polymer can be employed as the basic material for various organic electronic devices. To construct the organic electronic devices, various organic materials are needed to perform different functions. In this thesis, we have implemented both thin-film transistors (OTFTs) and non-volatile memory devices (NVMs) by homemade ink-jet printing system. To implement these devices, in detail, we chose polyimide as the flexible substrate. On the top of the substrate, the sources/drains, gates, and conductive electrodes are composed by water based conductive polymer (PEDOT/PSS). In addition, polyvinylphenol (PVP) and P(VDF-TrFE) are employed as the bi-layer insulator material. Regarding the semiconductor material, we chose poly(3-hexylthiophene), P3HT, as the semiconductor material. Based on the experimental results, the ferroelectric field-effect-transistor (FeFET) inherited the hysteresis phenomenon from the polarized structure of the P(VDF-TrFE). This demonstrated the NVM capability of the developed FeFET devices. The device operates in on-state under zero gate voltage and off-state under reverse gate voltage. The on/off state ratio is over 200. In addition the data can be sustained over 1000 seconds. Therefore, we have successfully developed flexbile FeFET NVMs by all-inkjet-printing technology.