p-i-n矽奈米線元件的成長及特性

The Growth and Characteristics of p-i-n Silicon Nanowire Device

王晨昀(Chen-Yun Wang)

指導教授 ： 李嗣涔

國立臺灣大學/電機資訊學院/電子工程學研究所/碩士(2009年)

https://doi.org/10.6342/NTU.2009.01700

摘要

本篇論文成功的利用化學氣相沉積法(CVD)經由氣-液-固相 (VLS)的成長機
制,並且在成長過程中加上電場得到矽奈米線p-i-n 接面,論文首先探討和矽奈米線
長度與成長時間的關係,之後再從一系列的分析來了解矽奈米線的結構及電子特
性,並且在經由後段處理後使雜訊變小電性變佳,接著重複量測p-i-n 矽奈米線的電
子特性,最後再由靜電原子力顯微鏡(EFM)來定義所成長的矽奈米線的p 型,.i 型和
n 型的接面位置.

關鍵字

矽奈米線

並列摘要

The electric-field directed growth of silicon nanowire (SiNWs) p-i-n junction
was fabricated successfully by chemical vapor deposition via the vapor-liquid-solid
(VLS) growth mechanism in a low pressure chemical vapor deposition (LPCVD)
system. In this thesis, the length of SiNWs as a function of growth time was first
investigated. Then the electric and structure properties of the SiNWs were measured
using a series of analysis tools. The growth mechanism and electrical characteristics of
SiNWs p-i-n junction are investigated and explained. .the repeated I-V measurement of
p-i-n junction SiNWs are also demonstrated. In the end, the electrostatic force
microscopy (EFM) was used to define the position of p-I and i-n junctions in the
SiNWs.

並列關鍵字

Silicon Nanowire

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