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  • 學位論文

混合式相變化記憶體之寫入感知式頁面管理

Write-Aware Page Management for Hybrid SLC/MLC PCM

指導教授 : 郭大維
共同指導教授 : 張原豪(Yuan-Hao Chang)
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摘要


相變化記憶體是一種新興的非揮發性記憶體,與動態隨機存取記憶體比較起來,擁有較好的擴展性與能源效率,因此在未來可以取代動態隨機存取記憶體作為主記憶體使用。而多階儲存單元之相變化記憶體的發展,使得其密度得到進一步的上升,但也造成存取速度以及壽命的嚴重減損。本篇論文提出混合式相變化記憶體之寫入感知式頁面管理機制,包含寫入感知式的頁面回收機制與壽命感知式的未使用頁面管理機制來分別管理使用中與未使用的頁面,並改善混合式相變化記憶體的效能與壽命。實驗結果展現出所提出的機制在效能上與單階儲存單元之相變化記憶體相仿,卻能佔用較少空間。

並列摘要


Phase change memory (PCM) is an emerging non-volatile memory that has high scalability and power efficiency to substitute the DRAM-based memory system in the future. The development for multi-level cell (MLC) PCM makes PCM can provide higher density but suffer from significant degradation for performance and endurance. This paper proposes the write-aware page management on the main memory system applies hybrid SLC-MLC PCM. Two implementations, namely, write-aware page frame reclaiming management and free page management manage in-used pages and free pages respectively, for performance and endurance improvements. The results of experiments show that the proposed approach can reach the performance like SLC PCM but take fewer space because there has some MLC PCM in our memory system.

參考文獻


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