應用於全晶片積體電路改善非矩形閘極電晶體之電性估測準確性

Accuracy Improvement of the Electrical Characteristic Estimation for Transistors with Non-rectangular Gates in Full-Chip Integrated Circuit

錢盛偉(Sheng-Wei Chien)

指導教授 ： 蔡坤諭

國立臺灣大學/電機資訊學院/電機工程學研究所/碩士(2014年)

https://doi.org/10.6342/NTU.2014.10887

摘要

無資料

關鍵字

Equivalent Gate Length ； Technology Computer Aided Design ； non-rectangular transistors ； design for manufacturability ； 6T-SRAM ； Location-Dependent Weighting Method

並列摘要

Non-ideal pattern transferred from drawn circuit layout to manufactured nanometer transistors can severely affect electrical characteristics such as drive current, leakage current, and circuit performance. Estimation accuracy of electrical characteristics is degraded in both the saturation and subthreshold regions, especially in the subthreshold region, since current density along the channel width is non-uniform due to narrow-width related edge effects. However, the conventional equivalent gate length (EGL) extraction approach does not consider the uniformity of current density to estimate electrical characteristics. An efficient approach to accurately estimate electrical characteristics of non-rectangular transistors due to sub-wavelength lithography effects is indispensable for design-for-manufacturability-aware nanometer integrated circuit design. In this work, a new EGL extraction approach considering the uniformity of current density is proposed to improve the estimation accuracy of electrical characteristics, which utilizes location-dependent weighting factors and convex parameter extraction techniques. A three-dimension device simulator of Technology Computer Aided Design (TCAD) is utilized to specifically verify accuracy of using the new EGL extraction approach for non-rectangular transistors. Preliminary simulation results indicate that the new approach can significantly improve the estimation accuracy, especially for leakage current in the subthreshold region. The new approach is implemented to estimate static noise margin and propagation delay of 6T-SRAM circuit layout, which shows that it is more accurate than the conventional approach for non-rectangular transistors. Furthermore, this new approach can be promoted to estimate electrical characteristics of full-chip design circuit with the non-rectangular device model card extracted from TCAD device.

並列關鍵字

等效閘極長度 ； 電腦輔助設計 ； 非矩形電晶體 ； 可製造性設計 ； 靜態隨機存取記憶體 ； 位置相依權重法

參考文獻

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