傳統式與背電極式單晶矽太陽能電池製程與模擬

在本論文中，利用離子佈植方法形成P型射極以及N形背面電場而製成單晶矽N型太陽能電池。利用原子層沉積法(ALD)所成長的氧化鋁(Al2O3)作為表面射極的鈍化層，以及利用電漿輔助化學氣相沈積(PECVD)成長的氮化矽(SiNx)當作抗反射層，太陽能電池效率可以達到16%。更進一步的加入表面金字塔結構和背點電極所製作出的電池效率可以達到18% 以上。指叉式背電極太陽能電池是一種能更進一步提升太陽能電池效率的結構。指叉式背電極太陽能電池可利用類似於傳統單晶矽太陽電池的製程製作，我們所製作出的指叉式背電極太陽能電池效率為7.8%。藉由Sentaurus TCAD 模擬軟體的幫助，我們可以找出影響太陽能電池效率的因子，在未來的製程中可以更進一步的提升電池效率。薄型太陽電池是未來太陽能工業所發展的趨勢。在這篇論文中，藉由Sentaurus TCAD 模擬軟體探討了厚度對指叉式背電極太陽能電池效率的影響

關鍵字

離子佈植； N型太陽電池；表面金字塔結構；叉式背電極太陽能電池； TCAD模擬

並列摘要

In this thesis, n-type crystalline silicon solar cell is fabricated by using ion implantation to form the boron (p+) emitter and phosphorous (n+) back surface field. With atomic layer deposition (ALD) growth Al2O3 for emitter passivation and plasma enhanced chemical vapor deposition (PECVD) growth antireflection coating layer, the cell efficiency can reach around 16%. The additional textured surface and rear point contact can further improve the cell efficiency to over 18%. The interdigitated back contact solar cell (IBC) is the promising cell type for further efficiency improving. The IBC cell is fabricated in this thesis using the similar technique of conventional crystalline silicon solar cell. The efficiency of the IBC cell we fabricate is 7.8%. With the aid of Sentaurus TCAD, the factor which influences the IBC cell efficiency is pointed out, and the efficiency can be further improved in the future. Thin solar cell is the future trend of the photovoltaic industry. The dependence of the IBC cell efficiency to the cell thickness is investigated by the Sentaurus TCAD in this thesis.

並列關鍵字

ion implantation ； N type solar cell ； texture ； interdigitated back contact solar cell ； TCAD simulation

參考文獻

[1] William Shockley and Hans J. Queisser, "Detailed Balance Limit of Efficiency of p-n Junction Solar Cells", Journal of Applied Physics, Volume 32 (March 1961), pp. 510-519