本論文主要內容針對在多層低溫共燒陶瓷(Low Temperature Co-fired Ceramic, LTCC)中用以溝通不同側之積體電路(Integrated Circuit, IC)晶片與天線陣列之寬頻微帶線轉微帶線連通柱提出設計與探討。本文所探討之連通柱轉接分成內部結構與外部結構分別設計。內部結構之等效阻抗計算由Ansoft Q3D模擬軟體擷取之集總電路模型取得。外部結構包含微帶線轉連通柱之電磁現象可視為微帶線轉同軸電纜線之型態以便選擇適當的物理尺寸。最後,整體微帶線轉微帶線連通柱的幾何參數可將外部結構與內部結構結合而得。藉由商用軟體Ansoft HFSS可得知從直流到70GHz之折返損耗均小於19dB,穿透損耗均小於0.48dB。最終,利用電磁模擬軟體與LTCC構裝量測驗證此設計的準確性。此外,在本篇論文中亦提出利用轉角數目及傳輸路徑等長之概念實現連接積體電路晶片與天線陣列間的多條傳輸線,設計佈線使其在70GHz時仍可保持每條傳輸線間相位差小於2度且近端串音與遠端串音均小於26dB。
A wide-band microstrip-to-microstrip via transition used for connecting an integrated circuit chip and an antenna array on the opposite sides of a multi-layer low-temperature co-fired ceramic substrate is investigated in this paper. The via transition is decomposed into external and internal segments to facilitate the design. The equivalent impedance of the internal segment, consisting of a multi-layered through-hole via with four ground vias, is calculated from the lump-circuit model generated by Ansoft Q3D Extractor. The electrical performances of the external segments, consisting of via to microstrip line transitions, are evaluated as microstrip-to-coax transitions for choosing appropriate physical parameters. Finally, the geometrical parameters of entire transition are obtained by combining the results of the external and internal segments. It has been demonstrated, through the simulation results by commercial software Ansoft HFSS, that the return loss is better than 19dB over a band from DC up to 70GHz with an in-band insertion loss better than 0.48dB. Coherent results between simulation and measurement are also obtained with a back-to-back transition structure. Additionally, based on the design guideline of equal line length and same number of corners, the layout of microstrip lines between integrated circuit chip and antenna array is also proposed. Finally the simulation result shows the phase difference is in two degrees and near-end crosstalk and far-end crosstalk are both better than 26dB between each microstrip line up to 70GHz.