微波及毫米波平衡不平衡轉換器之設計及其應用

Microwave and Millimeter-Wave Balun Design and Applications

吳佩憙(Pei-Si Wu)

指導教授 ： 黃天偉

共同指導教授 ： 王暉(Huei Wang)

國立臺灣大學/電機資訊學院/電信工程學研究所/博士(2006年)

https://doi.org/10.6342/NTU.2006.02055

摘要

本論文研究方向是著重於使用商用標準矽與砷化鎵單晶製程來設計微波與毫米波段之平衡不平衡轉換器及其在混頻器和相移器之應用。
在本論文中，我們研究了四種平面以及五種多層轉換式平衡不平衡轉換器。平面轉換式平衡不平衡轉換器可用多耦合傳輸線等效模型來做初步的合成設計；同時，利用此四種轉換式平衡不平衡轉換器設計之單平衡二極體混頻器，使用商用砷化鎵0.15微米高電子移動率電晶體製程來實現，在10到45 GHz的頻段中，晶片面積均小於0.3 平方毫米，且最好可達到100%與105%的頻寬。
除了混頻器的應用之外，我們也提出了兩種使用向量相加原理的相移器架構，並分析其原理和其向量規則，和各元件的設計方式。此二相移器使用0.18微米互補式金氧半導體製程來實現，在15至20 GHz間，均可達到360度的連續相移，以及37 dB以上的振幅控制範圍，且晶片面積分別為0.72與0.58平方毫米。
最後，我們提出了一個利用多個空橋來實現的馬迅平衡不平衡轉換器，並將其應用於混頻器以及77 GHz汽車防撞雷達系統。利用此平衡不平衡轉換器的單平衡二極體混頻器使用商用砷化鎵0.15微米高電子移動率電晶體製程來實現，可達到46到78 GHz的頻寬，並且晶片面積小於0.3 平方毫米。我們亦實現了一個應用於77 GHz汽車防撞雷達系統的收發機單晶片，此晶片整合了一個19.25 GHz至77 GHz的四倍頻器、一個緩衝放大器、兩個中等功率放大器、兩個切換器、一個低雜訊放大器、和一個基頻混頻器；在77 GHz發射時具有7.9 dBm的輸出功率，以及在77.05 GHz接收時具有0.7 dB的轉換損耗。

關鍵字

平衡不平衡轉換器 ； 微波單晶積體電路 ； 砷化鎵 ； 互補式金氧半場效電晶體 ； 高電子移動率電晶體

並列摘要

The purpose of this dissertation is to develop microwave and millimeter-wave baluns and their applications using commercial standard GaAs based HEMT and Si based CMOS MMIC processes.
Four planar and five multi-layer transformer baluns are presented in this dissertation. The coupled-line equivalent models are used to synthesis the initial design of the planar transformer baluns up to 50 GHz. Four singly balanced diode mixers using these for planar transformer baluns are implemented using commercial GaAs 0.15 um HEMT processes. The chip sizes of these MMICs are all within 0.3 mm2 and two of these circuits achieve bandwidths of 100% and 105% between 10 to 45 GHz.
Two new phase/amplitude control MMICs using vector sum method are proposed and implemented employing 0.18 um CMOS technology. The analysis, design equations, and building blocks of these two circuits are developed. These two MMICs demonstrate 360° continuous phase and amplitude control with 37 dB dynamic ranges from 15 to 20 GHz, the chip sizes are 0.72 and 0.58 mm2.
A modified Marchand balun is designed using multiple air-bridges, and used in a singly balanced diode mixer and 77 GHz automotive radar system at last. These two circuits are implemented using GaAs 0.15-um HEMT process. The broadband diode mixer achieves conversion loss of better than 10 dB from 46 to 78 GHz and the chip size is only 0.57 mm × 0.52 mm. The single 77 GHz transceiver chip with 3 × 2 mm chip size combines a 19.25 to 77 GHz quadrupler, a buffer amplifier, two medium power amplifiers, two switches, a low noise amplifier, and a fundamental mixer. It features a 7.9-dBm RF output power at 77 GHz in the transmitting mode, and the receiver has a conversion loss of 0.7 dB with RF frequency of 77.05 GHz and IF frequency of 50 MHz.

並列關鍵字

balun ； MMIC ； GaAs ； CMOS ； HEMT

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