金氧半元件中多層鍺奈米粒子對發光特性的影響

矽鍺光電元件具有與矽積體化電路整合的優點，這是因為矽鍺光電元件具有1.3至1.55 um 的波長，它可以提升光纖通訊應用的重要性。隨著各種元件的製程已經相當成熟，如在矽鍺發光元件、調變器和光偵測器等元件製程，這些都將有助於矽光電元件和光電積體電路的研究與發展。本論文中我們先製做一個基本的金屬-氧化物-半導體結構的發光元件之後製作具有鍺奈米粒子於氧化層的金屬-氧化層-半導體結構的發光元件。本論文重點在於吾人對元件製作出不同層數的鍺奈米粒子及改變爐管退火時間，再加以量測之，想藉由增加多層數的鍺奈米粒子，來提高鍺奈米粒子捕捉電子的機率；增加退火時間，嘗試是否可提高鍺奈米粒子形成奈米粒子的密度及結成奈米粒子的完整度；以及對多層鍺奈米粒子降溫進行量測，來看改變這三樣參數對EL頻譜的影響。

關鍵字

矽鍺元件； OEIC(光電積體電路) ；鍺奈米粒子； EL ； POA

並列摘要

The advantage of the optoelectronic component of silicon germanium is fully compatible with the Si-based microelectronic chips. Because SiGe-based optoelectronic devices can be tailored from 1.3 to 1.55 um, it increases the importance of this material system to fiber communication applications. With the ripe process technology of the several key devices like SiGe-based light emitters, photodetectors, modulators, and waveguides, it also opens the door for Si-based optical and electronic integrated circuits (OEICs). In this thesis we first fabricated a device which has the basic MOS structure and we embedded Ge nanocrystal in the oxide. This thesis point is that we fabricated different number of layer Ge nanocrystal and change post oxidation anneal time. Then we measure it. We try increasing the number of layer to increase the probability of Ge capture electron. Increase post oxidation anneal time to get whether Ge nanocrystal can form more like sphere independently.Finally, We measure our sample when we decreasing the temperature.Change these three factors and see the effect of EL

並列關鍵字

SiGe device ； OEIC ； Ge nanocrystal ； EL ； PO

參考文獻

[1] S.M.Sze.”Semiconductor device physics and technology”,New York: Wiley,1985.

[2] S.M.Sze.”Physics of semiconductor device”,New York:Wiley,1981.

[6] Kittle,C.”Introduction to solid state physics”,New York:Wiley,

,1982.

[10] 呂紹維，”A Study of Metal-Oxide-Semiconductor Structure with Embedded Ge Nanocrystals by Using A Trap Model”國立台灣大學電子工程研究所碩士論文，2005.

國際替代計量

金氧半元件中多層鍺奈米粒子對發光特性的影響

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