應用於802.11a無線射頻系統之CMOS 功率放大器設計

The Design of a CMOS 5.25GHz Differential Power Amplifier for 802.11a WLAN System

黃奇順(Chye-Shyun Wong)

指導教授 ： 盧信嘉

國立臺灣大學/電機資訊學院/電子工程學研究所/碩士(2005年)

https://doi.org/10.6342/NTU.2005.10332

摘要

本篇論文主旨在於實現適用於IEEE 802.11a 無線區域網路系統的功率放大器，在論文中的電路設計分為兩大部分，包括了CMOS 製程的放大電路和其外部匹配電路。其中CMOS 製程的放大電路採用台積電標準0.18微米1P6M互補式金氧半導體的製程來實現，而外部匹配電路則採用低溫共燒陶瓷技術(LTCC)實現。
本研究採用差動且自我偏壓的方式解決功率放大器操作在23.2dBm的功率下時會面臨的崩潰現象和熱載子現象，進而提高其可靠度。為了增加被動電路的Q值以增加整顆功率放大器的效率，本研究採用LTCC來實現外部匹配電路, 而且外部電路用LTCC取代PCB板的設計在未來可將整顆功率放大器整個為一SOP。另一方面，為了提高此功率放大器與中頻，低頻電路的整合，本研究採用TSMC提供之RF標準電晶體模型，且電壓定於1.8V。

關鍵字

放大器

並列摘要

The purpose of this thesis is to present a power amplifier which can be used in WLAN 802.11a system. Two major parts are included, the first part is power amplifier chip implemented by CMOS process while the other part is the output matching network. The amplifier chip is implemented by TSMC 0.18um CMOS process, and the output matching network is implemented by low temperature co-fired ceramic (LTCC) process.
We adopt differential self-biased topology in the power amplifier to overcome the problems of hot carrier effect and break down effect when the power amplifier is operating in 23.2dBm output power. Accordingly, the differential self-biased topology can improved the reliability of power amplifier significantly. Moreover, the output matching network which implemented by LTCC, with inherently high Q factor, can improved the efficiency of the total power amplifier. The replacement of PCB board discrete passive components with LTCC will allow the realization the concept of SOP (System on Package) in the near future. Furthermore, the implementation of power amplifier with TSMC 0.18μm CMOS process and with DC voltage of 1.8V makes it possible to integrate the IF and base-band circuits in a single chip.

並列關鍵字

Power Amplifier

參考文獻

[1] Arya R. Behzad, “A 5-GHz Direct-Conversion CMOS Transceiver Utilizing Automatic Frequency Control for the IEEE 802.11A Wireless LAN Standard,” IEEE Journal of Solid-State Circuits, Vol. 38, No. 12, pp. 2209-2219, Dec. 2003.

[3] R.V. Nee and R. Prased, OFDM Wireless Multimedia Communication, Artch House, 2000.

[5] Guillermo Gonzalez, Microwave Transistor Amplifiers Analysis and Design, Prentice Hall, 1984.

[6] Sowlati, T., and Leenaerts, D.M.W, “A 2.4-GHz 0.18-/spl mu/m CMOS self-biased cascode power amplifier,” IEEE Journal of Solid-State Circuits, Vol. 38, No. 8 , pp. 1318 – 1324, Aug. 2003.

[7] YunSeong Eo, and KwangDu Lee, “A Fully Integrated 24-dBm CMOS Power Amplifier for 802.11a WLAN Applications,” IEEE Microwave and Wireless Components Letters, Vol. 14, No. 11, pp. 504-506, Nov. 2004.