表面處理對金屬介面特性的影響以及金屬介面特徵接觸阻抗之量測

The Effect of Interfacial Treatment to Metal Interface and pecific Contact Resistivity Measurement of Metal Interface

黃柏銓(Pai-Chuan Huang)

指導教授 ： 吳志毅

國立臺灣大學/電機資訊學院/光電工程學研究所/碩士(2007年)

https://doi.org/10.6342/NTU.2007.02402

摘要

隨著製程微細化，閘極和絕緣層厚度都會呈比例縮小以減少晶片的面積。原本以多晶矽作為閘極而產生的閘極空乏區效應會逐漸明顯。使用金屬作為閘極不但能消除此效應，同時還有低阻抗等優點。但在使用金屬作為閘極的同時，必須克服金屬原有功函數所造成驅動電壓的限制，我們期望能找出一種調變金屬功函數的理想方法，以達成金屬閘極在未來最新半導體製程上的應用。在本論文中，我們利用介面處理的方式，成功讓金屬閘極的功函數有了-0.2eV到+0.3eV的調變。除此之外，在論文後半，我們為了多瞭解常見的金屬矽化物矽化鎳，試著去量測其介面一些性質如特徵接觸阻抗，最後還結合了四點探針量測與TLM量測成功去除探針接觸阻抗所造成的量測影響。

關鍵字

金屬閘極 ； 功函數調變 ； 特徵接觸阻抗

並列摘要

As CMOS devices are scaled down, gate electrode and insulate layer will also be scaled down in order to decrease the IC area. The poly depletion on poly silicon gate electrode will dominated total efficiency of the device, to use the metallic material as gate electrode can not only eliminate it but also provide lower gate electrode resistivity. The work function of the metals for NMOS and PMOS should be similar to that of n-Si and p-Si. However there is no clear conceptual understanding of how to design an interface with a given effective work function. In this thesis, we had find out some interfacial treatment that can shift metal gate work function form -0.2eV to +0.3eV. Beside, we had combine 4-point probe measurement principle on TLM pattern to measure NiSi ohmic contact resistivity.

並列關鍵字

metal gate ； work function shift ； specific contact resistance

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