適用於IEEE 802.11a無線通訊系統之單一晶片與結合低溫共燒陶瓷製程設計之差動式CMOS功率放大器

The Design of Fully Differential Power Amplifiers for IEEE 802.11a WLAN System Using Fully On-Chip and LTCC On-Package Integrate Approaches

黃韋超(Wei-Chao Huang)

指導教授 ： 盧信嘉

國立臺灣大學/電機資訊學院/電子工程學研究所/碩士(2006年)

https://doi.org/10.6342/NTU.2006.10456

摘要

本篇論文主旨在於實現適用於IEEE 802.11a無線區域網路通訊系統之無線射頻功率放大器。此篇論文中，我們利用兩種不同方式來實現無線射頻功率放大器，第一種方式是將功率放大器整合於單一矽製程晶片中。第二種方式為利用覆晶技術和低溫共燒陶瓷製程將功率放大器整合成單一封裝並製成模組。
此篇論文中，我們採用相同的設計架構，不同的實現方式以比較其差異性。本研究利用全差動架構和電晶體自我偏壓方式來解決功率放大器在高功率輸出下會面臨的崩潰現象及熱載子效應，進而提升系統可靠度。
為了提高被動電路的品質因子與降低功率消耗，整合於單一封裝之功率放大器模組採用多層結構之低溫共燒陶瓷製程來實現外部匹配電路。利用此種多層結構來取代傳統平面印刷電路板的離散元件，將有助於未來達成系統封裝的理想。此外，為了使功率放大器可與中頻，基頻電路做整合，本研究採用台積電0.18-μm製程提供之標準射頻電晶體模型且供給電壓定於1.8伏特。

關鍵字

功率放大器 ； 差動式 ； 低溫共燒陶瓷 ； 覆晶

並列摘要

The purpose of this thesis is to present a power amplifier which can be used in IEEE 802.11a WLAN system. In this thesis, the power amplifier is implemented by two approaches, one uses fully on-chip integrated technique and another uses LTCC on-package integrated and flip-chip connection techniques.
In order to investigate the difference between on-chip integrated PA and on-package integrated PA, these two amplifiers are built with the same topology. We adopt differential self-biased cascode topology to overcome the problems of hot carrier effect and break down effect when the power amplifier is operating in 23.2 dBm high output power. Accordingly, the differential self-biased cascode topology can improve the reliability of power amplifier significantly. Three-stage architecture is chosen in these power amplifiers for more than 20 dB high gain at 5 GHz.
The passive part of on-package integrated PA is implemented by low temperature co-fired ceramic (LTCC), with inherently high quality factor, can improve the efficiency drastically. The replacement of PCB discrete passive components by multilayer LTCC embedded one makes the concept of system-on-a-package (SOP) real.
Furthermore, the implementation of power amplifier with TSMC 0.18-μm CMOS process and 1.8 V DC supply voltage make it possible to integrate the IF and base-band circuits in a single chip.

並列關鍵字

cmos power amplifier ； flip-chip ； LTCC ； WLAN

參考文獻

[1] S.C. Cripps, RF Power Amplifiers for Wireless Communications, Artech House, Norwood, MA, 1999.

[2] S.C. Cripps, Advanced Techniques in RF Power Amplifier Design, Artech House, Norwood, MA, 2002.

[3] Guillermo Gonzalez, Microwave Transistor Amplifiers Analysis and Design, Prentice Hall, 1996.

[4] David M. Pozar, Microwave Engineering, New York, Willey, 2005.

[5] Kyutae Lim, Stephane Pinel, Mekita Davis, Albert Sutono, Chang-Ho Lee, Deukhyoun Heo, Ade Obatoynbo, Joy Laskar, Emmanouil M. Tantzeris, and Rao Tummala, “RF-System-On-Package (SOP) for Wireless Communications,” IEEE Microwave Magazine, pp. 88-99, March 2002.