電化學技術分析於矽通孔中之銅電沉積行為

Electrochemical Analysis of Copper Electrodeposition for Through-SiliconVia Filling

呂宛儒(Wan-Ru Lu)

指導教授 ： 蔡子萱

共同指導教授 ： 張裕祺(Yu-Chi Chang)

淡江大學/工學院/化學工程與材料工程學系碩士班/碩士(2012年)

https://doi.org/10.6846/TKU.2012.01361

摘要

本篇摘要未授權

關鍵字

銅 ； 矽通孔 ； 電化學沉積 ； 交流阻抗 ； 極化曲線

並列摘要

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並列關鍵字

copper ； through-silicon via ； electrodeposition ； impedance, polarization curve

參考文獻

Beica, R., Sharbono, C., Ritzdorf, T., Semitool, Inc., “Through Silicon Via Copper Electrodeposition for 3D Integration,” Electronic Components and Technology Conference, 2008, Proceedings 58th, pp. 577-583.

Bonou, L., Eyraud, M., Denoyel, R.,andMassiani, Y.,“Influence of additives on Cu electrodeposition mechanisms in acid solution: direct current study supported by non-electrochemical measurements” Electrochim. Acta ., 2002,47(26),pp.4139-4148.

Chen, Q., Wang, Z., Cai, J., Liu, L., “The influence of ultrasonic agitation on copper electroplating of blind-vias for SOI three-dimensional integration,” Microelectronic Engineering, 2010, 87(3), pp. 527-531.

Dow, W. P., Liu, C. W., “ Evaluating the Filling Performance of a Copper Plating Formula Using a Simple Galvanostat Method,” Journal of the Electrochemical Society, 2006, 153(3), pp. C190-C194.

Frank,A.,and Bard,A.J., “The Decomposition of the Sulfonate Additive Sulfopropyl Sulfonate in Acid Copper Electroplating Chemistries” J. Electrochem. Soc.,2003,150(4),pp.C244-C250.