傳統之薄膜電晶體液晶顯示器(TFT-LCD)製造採用濕製程設備,產生大量有毒廢棄液,本研究探討使用高精度雷射乾製程設備做無汙染之蝕刻,在液晶玻璃面板上以雷射刻劃做絕緣加工,本文將以532nm波長之綠光雷射為加工平台進行絕緣刻劃實驗,並透過灰關聯理論實現玻璃金屬薄膜之雷射製程參數最佳化。 本研究探討雷射刻劃金屬薄膜製程,以不傷玻璃基板及成功絕緣金屬薄膜為主要目標,再以金屬薄膜刻劃達一定線寬、熱效應最小化的要求下,規劃雷射系統綜合參數運作來達成。因此雷射參數選擇為絕緣製程優劣關鍵,這些參數包括製程焦距、雷射功率以及雷射Q-開關頻率,在實驗過程中,經由灰階理論分析與實驗結果對應呈現,闡明灰階理論應用雷射製程之可行性。本實驗同時驗證532nm倍頻雷射與玻璃基板之金屬薄膜在適當參數組合控制調整下,可以得到最佳化製程結果。
Traditional manufacturing of the thin film transistor liquid crystal display (TFT-LCD) uses wet process equipments, hence producing large amounts of toxic liquid waste. This study presents a method of using dry equipment with high-precision laser isolation engraving on the LCD glass panel for non-pollution etching process. This paper will use 532nm wavelength green laser as the processing platform for insulation experiments, and aim to achieve parameter optimization of laser isolation process on the glass metal thin film through grey relational theory. In this study of laser isolation process, the two main targets are that the glass substrate not melted and successful metal film insulation. Under the requirements of scribing the metal film with a certain groove width and minimizing the heat affected zone, we plan to integrate the laser system operating parameters to achieve the targets. Therefore, the laser parameter selections are the key elements for the isolation process. These key parameters include laser focusing position, average laser power and Q-switch frequency. Using the experimental result and the grey theory analysis, we illustrate the validity of applying the grey theory to laser isolation process. This paper verifies the application of 532nm laser to the glass panel metal film with an appropriate combination of control parameters that can obtain excellent processing performance.