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  • 學位論文

電容與阻抗量測電路應用於奈米碳管氣體感測器之研究

A Study on the integration of Carbon nanotube Gas Sensor with Capacitance and Resistance Sensing Circuit

指導教授 : 黃榮堂 施勝雄
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摘要


本論文提出一種利用奈米碳管作為氣體感測元件,結合CMOS電路成為分子級感測晶片的方法,將測得之訊號直接傳入相連的CMOS訊號處理單元中,此訊號處理單元可為阻抗量測單元或電容量測單元,因此能夠直接量測、判斷所測得的微量電訊變化。將來可於奈米碳管表面進行改質,作為生化感測元件之有效方法;並且利用陣列形式,在同時間內可偵測不同的氣體分子,以發揮氣體感測器的辨識能力,實現可穿戴式(Wearable)單晶片(SoC)的目的。 由於奈米碳管在感測氣體時,訊號大部分為 等級的電流訊號,換算成阻抗單位約為Mega歐姆等級,利用反相放大器電路做偵測,再比較輸入與輸出之波形來換算出碳管的電阻值。電容感測方面,本研究選擇切換電容式放大器作為訊號的讀出電路。架構上,利用三個開關、兩個電容(其中一個為待測電容)、取樣且保持電路及一個運算放大器組成。同樣的,利用輸出與輸入信號比值來換算出奈米碳管的電容值。本系統以TSMC 0.35 μm 2P4M製程來設計感測晶片,面積約為759.5×635.4 μm2,工作電壓採用3.3V,以20kHz作為CMOS開關工作頻率、輸入500 Hz~1 kHz弦波測試,可以感測約1~180pF之電容值,及200kΩ~4MΩ之電阻值,預期應可作為實際的生活應用。

並列摘要


In this thesis, we disclosed a new type of gas sensor composed of CNT (carbon nanotube) and CMOS circuitry. The signal through CNT can be read directly by means of the sensing circuit. And types of the sensing circuits can be an impedance amplifier, or switched-capacitor amplifier. In the future, this sensor can detect different gas molecules after specific surface modification on CNT, and it also provides an effective way in applying bio-sensors. Furthermore, an array-typed CNT-based sensor can detect various gas molecules at the same time, and it is desired to become a wearable device. When sensing the gas, the current signal is about several nA ~ hundreds of μA. In impedance unit, it is equivalent to the level of several mega ohms. By using inverting amplifier, and comparing the I/O waveforms (in sine wave), we can calculate the transistor value of CNT. As far as capacitor sensing is concerned, we chose Switched-Capacitor Amplifier as our signal process circuit. It has three switches, two capacitors (one is CNT capacitor), S/H circuit and an OP Amp. In the same way, we can estimate the capacitance of CNT by the ratio of input and output signals. We implemented the system in TSMC 0.35 μm 2P4M technology. The chip occupied 759.5×635.4 μm2 with supply voltage of 3.3V. Through simulation, the chip can work up to 20 kHz as the input signal of 500 Hz~1 kHz sine waves. This structure can measure the capacitance of about 1 to 180 pF, and resistance of 200kΩ to 4MΩ.

參考文獻


[24] 鄭錦鐘,全差動取樣保持積體電路之設計研究,碩士論文,中原大學電子工程研究所,2001
[26] 陳世昌,位移電容感測器之研究設計,碩士論文,國立台灣大學應用力學研究所,台北,2006
[1] 蔡政宏,奈米碳管電子元件之製備與應用,碩士論文,國立台北 科技大學機電整合研究所,台北,2006
[3] 林良澤,與CMOS製程相容之奈米碳管場效電晶體氣體感測元件之研究,碩士論文,國立台北科技大學機電整合研究所,台北,2007
[4] Zhi-Bin Zhang, Xian-Jie Liu, Eleanor E. B. Campbell, Shi-Li Zhang, "Alternating current dielectrophoresis of carbon nanotubes," J. Appl. Phys., Vol.98,056103, 2005

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