利用脈衝雷射沉積法成長氧化亞銅薄膜及特性研究

Pulsed Laser Deposition of Cu2O Thin Films

邱偉銘(Wei-Ming Chiu)

指導教授 ： 洪魏寬

國立臺北科技大學/電資學院/光電工程系研究所/碩士(2009年)

https://doi.org/10.6841/NTUT.2009.00164

摘要

本論文主要利用脈衝雷射沉積法(Pulsed Laser Deposition, PLD)，在A-plane Sapphire (110)和C-plane Sapphire (006)基板上成長出氧化亞銅薄膜，有系統地探討生長參數對薄膜表面形貌、粗糙度、結晶度、及光學特性的影響。所使用的光源為Nd：YAG Q-switched雷射，其波長為266 nm、脈衝寬度小於10 ns、重覆頻率10 Hz；使用的靶材為純度5N的氧化銅粉末，並經過高溫燒結製成的靶材。而我們也使用來源不同以及燒結溫度也不同的靶材來進行沉積，當同樣參數條件下也會因為不同的靶材而有不同的結果，而我們所使用的光源也同第一部份一樣。
而我們沉積出的的氧化亞銅薄膜經由X光繞射儀(XRD)進行分析，發現到容易出現氧化亞銅和氧化銅的混合相，但在特定參數下，量測到僅出現氧化亞銅在(110)的晶相，故推測為單晶的結構，並試著改變參數使其成長出更高品質的薄膜。當我們先沉積一層氧化鎂薄膜，在於其上所成長的氧化亞銅薄膜經由X光繞射儀進行分析，發現其結晶方向會有所改變，因此我們可以藉由不同的基板成長出各種不同結晶方向的薄膜。

關鍵字

脈衝雷射沉積 ； 氧化亞銅

並列摘要

In this study, thin films of cuprous oxide were deposited on Al2O3 substrates by pulsed laser deposition technique. An Nd:YAG Q-switched laser operating at a wavelength of 266nm, a pulsed duration less than 10ns, and a repetition rate of 10Hz, was used to ablate a Cu2O target. The Target for the deposition was obtained by sintering high-purity CuO powder(99.999%) at 1000℃ for 5 hours. The effects of the growth parameters on the film morphology, roughness, crystallinity, and optical properties were systematically investigated. In addition, the effects of the target for PLD on the film qualities were also investigated in details.
The X-ray diffraction results show that the structure of the films changes from Cu2O and CuO phase with the different parameters. In particular conditions, we proposed that the Cu2O thin films was the single crystal by X-ray diffraction. Finally, we also find the Cu2O thin films grown on a MgO films exhibits different structure.

並列關鍵字

PLD ； Cu2O

參考文獻

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