現今的通訊系統皆朝向MMIC 及SOC 的方向上做發展重點,為因應此方向的發展需求,運用標準CMOS 製程來設計RF 通訊系統已成為目前相當受重視的研究方向。而由於CMOS 製程技術的快速發展,CMOS 的元件尺寸逐漸縮小,使得操作速度加快、功率消耗降低、操作頻率提升,其中以操作頻率的提升對於設計RF 通訊系統最為重要,也因此CMOS 的元件可在運用在RF 通訊系統範圍更大。 本論文提出使用微機電元件整合於射頻CMOS的 Class AB類功率放大器之研究。在此系統中為了使感測節點電池壽命提高,因此功率放大器須具有高效率特色。該功率放大器是以TSMC 0.18μm 1P6M CMOS製程實現,工作電壓為1.8 V。結果顯示當系統操作在2.4GHz下,輸入功率為-10dBm時,輸出功率為14dBm,PAE為30%,在1.8GHz下,輸入功率為-10dBm時,輸出功率為14dBm,PAE為24%。我們希望設計出高整合度、低消耗功率的功率放大器,經過電路模擬我們設計出一個On-Chip的功率放大器,避免使用Lump元件以減少面積的損耗。且使用1.8 V的低電壓,以提高了PAE達到30%左右。
Nowadays, communication system development toward MMIC and SOC become more and more massive. Due to the reason, using the standard CMOS process for RF communication system design has been regarded as a valuable research. Since CMOS process develops rapidly and its feature sizes reduces gradually, it make the operation speed faster、the power consumption reduced and the operation frequency increased. The increased operation frequency is the most important for RF communication system designs. Therefore, CMOS elements can be applied to RF communication systems widely. The study demonstrates that the Class AB power amplifier based on RF CMOS integrates with MEMS Devices. Because the system is to extend the battery life of sensing points, the power amplifier is necessary to have the characteristic of high efficiency. The power amplifier fabrication is based on TSMC 0.18μm 1P6M CMOS process. Its operation voltage is 1.8 V. The experimental results show: when the frequency is 2.4GHz and the input power is -10dBm, the output power is 14dBm and its PAE is 30%;When the frequency is 1.8GHz and the input power is -10dBm, the output power is 14dBm and its PAE is 24%. We desire to design the high integrated and low power consumption power amplifier. By the circuit simulations, we design the On-chip power amplifier. Avoiding using Lump elements is for the reduction of the area consumption. Moreover, we use 1.8 V low voltage. PAE is up to more 30%.