銳鈦礦型二氧化鈦系透明導電薄膜之製備

Preparation of TiO2 anatase type transparent conducting films

徐維佑(Wei-Yu Hsu)

指導教授 ： 邱德威

國立臺北科技大學/工程學院/材料科學與工程研究所/碩士(2011年)

https://doi.org/10.6841/NTUT.2011.00353

摘要

在這個研究中，我們利用化學溶液法在玻璃上沉積摻雜鈮(x= 0, 0.05, 0.1, 0.15, 0.2 Ti1-xNbxO2)銳鈦礦相二氧化鈦係透明導電薄膜，接著在10% H2+90% N2氣氛下做400 °C，500 °C，600 °C退火一小時。XRD 量測顯示在退火後所有摻雜鈮之二氧化鈦薄膜試片均為銳鈦礦相二氧化鈦結構。UV可見光穿透率量測可以知道薄膜可見光平均穿透率為70-80% 。把600 °C退火一小時薄膜試片做四點探針量測，鈮摻雜量從x= 0 到 x= 0.2電阻率從22.46 Ω-cm 降低到 0.45 Ω-cm，霍爾量測顯示x= 0.2時薄膜載子濃度具有最大值為1.83×1021 cm-3為n型透明導電薄膜，薄膜遷移率平均為5-10 cm2V-1s-1，FE-SEM量測平均膜厚約為400 nm。
之後我們利用化學溶液法在耐溫玻璃上沉積銳鈦礦型二氧化鈦系Ti0.7Nb0.3O2薄膜。在10% H2+90% N2氣氛下做600 °C退火分別持溫(一小時、三小時和六小時)，四點探針量測薄膜在退火六小時後有最低電阻率0.05 Ω-cm。
在直流磁控濺鍍法中我們在耐溫玻璃上利用鈦靶沉積二氧化鈦薄膜，之後在10% H2+90% N2氣氛下做預退火600 °C分別持溫(一小時和六小時)。由XRD分析結果可以知道在氧流量2 sccm分別做退火一小時和六小時薄膜結構均為銳鈦礦相之二氧化鈦，經由四點探針量測薄膜在氧流量2 sccm退火一小時有最低電阻率9×10-3 Ω-cmUV，可見光穿透率量測在氧流量2 sccm做退火一小時和六小時可見光穿透率分別為45%和25%。

關鍵字

透明導電薄膜 ； TiO2:Nb ； 銳鈦礦

並列摘要

In this study, we have grown Nb-doped anatase TiO2 ( x= 0, 0.05, 0.1, 0.15, 0.2 Ti1-xNbxO2 ) transparent conducting films on eagle 2000 glass using chemical solution deposition and subsequent annealing in 10% H2+90% N2 atmosphere. The films annealed 400°C, 500°C, 600°C for 1hr. XRD measurment showed that all the Nb-doped TiO2 films fromed polycrystalline anatase structure after post-annealing. UV-Visible measurement showed the transmittance of films. All the films exhibt 70-80% transmittance in the visible region. Four point probe measurement the films annealed 600°C for 1hr, as Nb concentration increase from x= 0 to x= 0.2 the resistivity from 22.46 Ω-cm to 0.45 Ω-cm. The hall effect measurment showed carrier density at x= 0.2 have maxine value 1.83×1021 cm-3 n-type transmittance conductive thin films,the hall mobility 5-10 cm2V-1s-1 , FE-SEM showed the films cross section, the films thickness are 400 nm average.
After we have grown Nb-doped anatase TiO2 Ti0.7Nb0.3O2, the film on eagle 2000 glass using chemical solution deposition. The film annealed in 10% H2+90% N2 atmosphere 600°C for different annealed hours (1hr, 3hr, 6hr). Used four point probe measurment the film annealed 6hr have the lower resistivity 5×10-2 Ω-cm.
On DC magnetron sputtering we used Ti target to from TiO2 films were deposited on eagle 2000 glass. The films after post-annealing in 10% H2+90% N2 atmosphere at 600°C for different annealed hours (1hr, 6hr). XRD measurment showed oxygen mass flow 2 sccm annealed 1hr and 6hr is anatase TiO2 structure. The lower resistivity at oxygen mass flow 2 sccm annealed 1hr is 9×10-3 Ω-cm. UV-Visible showed oxygen mass flow 2 sccm annealed 1hr and 6hr, the transmittance is 45% and 25% in the visible region.

並列關鍵字

transparent conductive film ； TiO2:Nb ； anatase

參考文獻

[30] 蔡裕榮，以溶膠凝膠法製備透明導電氧化物薄膜的探討，碩士論文，中正大學化學研究所，2002年 (指導教授：周禮君)。

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