TNO透明導電膜濺鍍靶材之製備與性質研究

Preparation and Properties of TNO Transparent Conductive Film Sputtering Target

陳彥志(Yan-Zhi Chen)

指導教授 ： 吳明偉

國立虎尾科技大學/工程學院/材料科學與綠色能源工程研究所/碩士(2013年)

摘要

透明導電氧化物（transparent conducting oxide,TCO）主要使用的材料為氧化銦錫(tin-doped indium oxide,ITO)，因為具有優異的導電性(10-3~10-4 Ωcm。)與可見光穿透率80%以上，但因成本高、具毒性，因此積極發展可替代的材料。文獻已指出氧化鈦摻雜氧化鈮(niobium-doped titanium oxide, TNO)所鍍製的薄膜也具有良好的導電性與透光性，但研究主旨通常在於濺鍍時濺鍍參數的調控，較少有文獻對於靶材性質對後續鍍製成膜的影響。因此本研究主要探討TiO2與TNO陶瓷靶材之燒結密度、顯微結構、結晶結構與電性質。
實驗結果顯示當TiO2添加1.5mol%與3.0mol%Nb2O5相較於TiO2在燒結1100℃時已達到理論密度99%，且可使晶粒尺寸降低，而添加的Nb2O5已完全固溶入TiO2內並無其他析出相，皆為純rutile相。此外，純TiO2之電阻率大於108Ωcm以上，但摻雜了Nb2O5可使電阻率降至102Ωcm，若再使用不同的惰性氣氛燒結可使電阻率降至10-2 Ωcm。但TNO陶瓷靶材之電阻率仍較文獻中TNO薄膜高，主要是因結晶結構差異所致。

關鍵字

TiO2 ； Nb2O5 ； TNO ； 燒結 ； 顯微結構 ； 電阻率

並列摘要

Tin-doped indium oxide (ITO) is the mostly used material for transparent conductive oxide (TCO) film due to its excellent electrical conductivity (10-4 Ωcm) and visible light transmittance (~80%). However, the problem of high cost and its toxicity prohibited its application in the future. Thus, the alternatives to ITO have been extensively studied. Previous literatures indicates that niobium-doped titanium oxide (TNO) is a versatile material for TCO film, though the studies focused mainly on the optimization of sputtering parameters. The investigation concerning the effect of sputtering targets on the properties of TCO films are rarely found. The aim of this study was thus to study the sintered density, microstructure, crystal structure, and electrical property of TNO and TiO2 ceramic targets.
The results showed that the addition of either 1.5mol% or 3.0 mol% Nb2O5 can attain the high sintered density of 99% and also refine the grain size. Nb2O5 additive was found to be completely dissolved into the rutile of TiO2 and no precipitate could be revealed, as demonstrated in XRD analyses. Furthermore, the resistivity of TiO2 is higher than 108Ωcm. With the addition of Nb2O5, the resistivity of TNO ceramic target is much decreased to102Ωcm. When the inert atmospheres are used, the resistivity of TNO ceramic target is further improved to 10-2 Ωcm. Moreover, the resistivity of TNO target is always inferior to that of TNO film due to the difference of crystal structure.

並列關鍵字

TiO2 ； Nb2O5 ； TNO ； Sintering ； Microstructure ； Resistivity

參考文獻

[18]徐維佑，“銳鈦礦型二氧化鈦系透明導電薄膜之製備”，國立台北科技大學材料科學與工程學研究所，碩士論文，2011年。

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