磁控濺鍍法製備摻銅氧化鋅薄膜之研究

The Study of Cu-doped ZnO Thin Films by Sputtering

王聖文(Sheng-Wun Wang)

指導教授 ： 王耀德

國立臺北科技大學/電資學院/光電工程系研究所/碩士(2012年)

摘要

本研究使用RF磁控濺鍍系統在C-plane Sapphire基板上備製摻銅氧化鋅(以下簡稱CZO)薄膜，探討銅之摻雜對氧化鋅薄膜的結晶結構與導電特性之影響。本實驗之樣品分別以XRD、霍爾量測儀器來進行量測分析。
本實驗先以純氧化鋅靶材，透過基板溫度、濺鍍功率、濺鍍時間來調整製程參數調整，發現基板溫度在600℃、製程壓力10mTorr、濺鍍功率40W與濺鍍時間45分鐘下氧化鋅會形成以C軸(002)面為取向的薄膜且有較佳的電性。
因而以此參數製備摻銅氧化鋅薄膜。
CZO薄膜備製上，經由XRD分析與霍爾量測，發現隨著摻雜濃度提高，(002)峰值所對應的角度會往大度偏移，證實了銅原子取代了鋅原子形成CZO薄膜，而且當摻雜濃度為0.9at%時，CZO薄膜開始轉成p-type半導體，其中本實驗最佳的導電特性在摻雜濃度為1at%時，其電阻率為31.14(Ω-cm)、遷移率1.268(cm2/V-s)、載子濃度3×1016 cm-3。另外本實驗發現CZO薄膜可藉由退火處理進一步改善其導電特性，摻雜濃度為1at%退火處理後，其電阻率降低至7.22(Ω-cm)、遷移率提高為5.26(cm2/V-s)、載子濃度3.12×1016 cm-3。

關鍵字

銅摻雜 ； 氧化鋅 ； 濺鍍 ； 退火

並列摘要

In this study, Cu-doped Zinc Oxide (CZO) films on the Sapphire were prepared by RF magnetron sputtering system. We measured the crystal structure and electronic properties of the thin films by X-ray diffraction and Hall Effect measurement.
The processing parameters were optimized according to the crystalline guality of as-sintered undoped ZnO films. We found that ZnO films had good crystallinity on the c-axis orientation at substrate temperature of 600℃,working pressure of 10mTorr,
sputtering power of 40W, and deposition time of 45 minutes.
(002)-peak shifting toward higher angles with increase of Cu doping concertrations due to the substitution of zinc by Cu atoms. When Cu concentration was 0.9at %, CZO films turned the sample to p-type semiconductor. When Cu concentration was 1at %,it had a resistivity of 31.14(Ω-cm),mobility of 1.268(cm2/V-s)and carrier concentration of 3×1016 cm-3.In this study CZO films were successfully grown on sapphire by sputtering. Resistivity and mobility of samples become best after post-annealing.A good quality CZO film with resistivity of 7.22(Ω-cm),mobility of 5.26(cm2/V-s)and carrier concentration of 3.12×1016 cm-3.

並列關鍵字

Cu-doped ； ZnO ； Sputtering ； Post-annealing

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