光罩烘烤製程分析與改善

Analysis and Inprovement of photomasks During Baking Process

鄭順仁(Shuen-Jen Cheng)

指導教授 ： 林育才

元智大學/工程學院/機械工程學系/碩士(2005年)

摘要

無資料

關鍵字

光罩 ； 曝後烤 ； 邊緣效應 ； 側環 ； 關鍵尺寸 ； 阻劑膜厚

並列摘要

無資料

並列關鍵字

photomasks ； post exposure bake(PEB) ； edge effect ； guard ring ； critical -demension(CD) ； resist thickness

參考文獻

1.International Technology Roadmap for Semiconductors, Semiconductor Industry Association, 2004.

2.Dong-Il Park, Soon-Kyu Seo, Eui-Sang Park, Jong-Hwa Lee, Woo-Gun Jeong, Jin-Min Kim, Sang-Soo Choi, and Soo-Hong Jeong, “90nm Node CD Uniformity Improvement Using a Controlled Gradient Temperature CAR PEB Process”, Proceeding of SPIE, Vol.4889, pp. 634-640, 2001.

3.Lothar Berger, Werner Saule, Peter Dress, Thomas M. Gairing, C.-J. Chen, Hsin-Chang Lee, and Hung-Chang Hsieh, “Global CD uniformity improvement for CAR masks by adaptive post-exposure bake with CD measurement feedback”, Proc. SPIE Int. Soc. Opt. Eng. Vol. 5446, pp. 148-154, 2004.

4.Charles D. Schaper, Khalid El-Awady, T. Kailath, Arthur Tay, Lay Lee, W.-Khuen Ho, and Scott E. Fuller, “Processing chemically amplified resist on advanced photomasks using a thermal array”, Microelectronic Engineering, Vol.71, pp. 63–68, 2004.

5.Shiho Sasaki, and Takeshi Ohfuji, “The influence of the baking process for chemically amplified resist on CD performance”, Proc. of SPIE Vol.4889, pp. 599-606, 2002.