氫氣分壓對直流磁控濺鍍ITO膜特性影響之研究

徐憲義

指導教授 ： 劉宗平

元智大學/工程學院/電機工程學系/碩士(2003年)

摘要

中文摘要
在此研究中，我們利用DC磁控濺鍍法，製作透明導電ITO膜。製程中通入不同的氫氣流量(5 ~ 45 sccm)，探討ITO膜特性所受到的影響，其中包含光學、電學、膜面粗糙度、以及晶格結構等。同時，我們也量測樣品耐鹼性質。以及樣品在大氣環境下退火前、後的性質。
研究結果顯示，我們所得到ITO薄膜的最低面電阻為每單位面積20.3Ω，其及電阻係數為1.66 x 10-6Ωm。對於電阻均勻性而言，電阻值的平均偏差量為1.44%；在所沉積的ITO薄膜中，最佳的表面平均粗糙度約為1.16nm。由於ITO薄膜為多晶型結構，XRD量測的結顯示，[111]、[100]方向是沈積的優選方位，當在(222)晶面上的最大繞射峰角為30.3°，而且最小的晶格距離為3.05094 Å ；當波長為550nm時最大的透射率為84.6%，最小的反射率為11.7% •當sputter mode處於在metal mode時其鍍膜率從12.2 Å/sec急遽地升高到15.7 Å/sec；在耐化學性質的探討方面，量測所得最小的面電阻變化率為0.4%。在大氣環境下退火的研究中，我們發現ITO膜的電性與光學性參數之最佳變化率分別為1.04%，0.55%。
從研究的結果顯示，當氫氣流量增加時，晶格距離會減小，相對應的透射率會變大，而且電阻性質也會隨之而不同。在耐鹼性及大氣退火方面，ITO膜都會受到明顯的影響。

關鍵字

DC磁控濺鍍法 ； 平均粗糙度 ； 面電阻 ； RF磁控濺鍍法 ； 透明導電膜

並列摘要

Abstract
In this study, the sputtering technique with DC magnetron was used to deposit the ITO thin film on glass substrate. The properties of ITO films, such as the optical, the electrical, the roughness, and the crystal structure etc., affected at different H2 flow rate (5 ~ 45 sccm) in the sputtering process were studied. At the same time, the optical and electrical properties of ITO films on glass, including the stability of the resistance of films in the alkaline chemicals and at different annealing treatment in the atmosphere, were also studied.
The experimental results showed that the optimal sheet resistance and the resistivity of ITO films were 20.3Ω/sq. and 1.66 x 10-6Ω-m, respectively. Various deviations of the resistance respectively are 1.44% over the sample surface, 0.4% for chemical treatment, and 1.04% influenced by the annealing treatment in the atmosphere.The transmittance in the visible region is more over 80%, its deviation is 0.55%, and the average roughness of the surface is 1.16 nm.
By using XRD measurements, the preferred orientations for ITO films prepared at different hydrogen flow rate are (111) and (100). And the largest diffraction angle happened at 2θ is 30.3° for (222).
In summary, the results in this study showed that, besides the resistance obviously varying, the lattice distance was decreased and the transmittance was increasing as the hydrogen partial pressure was increased. Additionally, the properties of the samples for alkaline detergent and for annealing treatment in the atmosphere were obviously influenced when hydrogen flow was increased.

並列關鍵字

ITO ； Sputter ； RF

參考文獻

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