以單晶微波積體電路之製程研製5.25GHz與5.8GHz頻段HBT功率放大器

The Study and Implementation of 5.25GHz and 5.8GHz power amplifier by monolithic microwave integrated circuit (MMIC) technology

尤文平(Yu. Wen Ping)

指導教授 ： 楊正任

元智大學/工程學院/電機工程學系/碩士(2001年)

摘要

本論文以單晶微波積體電路(MMIC)之製程，針對下一代無線區域網路(Wireless LAN)之標準，設計符合IEEE 802.11a標準、5 GHz頻帶(5.15GHz-5.35GHz與5.7GHz-5.9GHz) 之高頻積體化功率放大器。而所設計之功率放大器除了採用現今常見的兩個電源4.8V與3.6V標準值更低之3.3V外，亦考慮下一代採正交分頻多工(Orthogonal Frequency Division Multi plexing ;OFDM)展頻調變技術之無線區域網路(Wireless LAN)標準對線性度之要求。達到具低電源、高線性度等特性之高頻積體化功率放大器。文中吾人先利用高頻電路模擬軟體，輔助設計功率放大器，並分析輸出入匹配網路對功率放大器之輸出諧波響應，再由台灣本地之半導體製程公司所提供的InGaP /GaAs HBT 電晶體、電感及電容模型，進行模擬、分析與設計。最後，並將所設計完成之12種功率放大器電路架構以單晶微波積體電路之製程(MMIC)，進行電路佈局與製程服務。

關鍵字

功率放大器

並列摘要

Power amplifier is the key component of wireless communication system, which is usually used in the RF transmitter. In this work we will study and implement the 5.25GHz and 5.8GHz power amplifier by monolithic microwave integrated circuit (MMIC) technology.The effect of second harmonic spurs for different kinds of output and interstage matching network are evaluated . The specification of the designed power amplifier are fulfilled the requirements of IEEE 802.11a standard，which uses OFDM modulation on the 5.7GHz ISM band.High linearity, low voltage (3.3V) MMIC power amplifiers have been implemented in this research .The nonlinear large signal model of InGaP/GaAs HBT is used to simulate and analyze the performance of designed circuits. The chip size of this power MMIC is about 1042μm×610μm. The output power is 23dBm while the input power is 2dBm; the circuit layout and processes are completed by local foundry service in Taiwan.

並列關鍵字

power amplifier

參考文獻

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