具功率檢測及偏壓控制雙頻(2.4/5.2GHz) 功率放大器之研製

The Study and Implementation of Dual-Band (2.4 GHz / 5.2GHz) Power Amplifier with Power-Detector and Bias Control Circuit

吳易達(Yi-Ta Wu)

指導教授 ： 楊正任

元智大學/工程學院/通訊工程學系/碩士(2005年)

摘要

本論文以雙頻帶匹配電路之理論架構，透過單晶微波積體電路製程，設計雙頻帶(2.4GHz/5.2GHz)功率放大器，並具功率偵測器與偏壓控制之功能，此功率放大器符合無線區域網路之標準。論文中所採用的各項電路模型係透過國家晶片中心(CIC)所提供之GCTC HBT製程參數進行模擬設計。將透過GCTC製程下線實現理論架構。在本論文中將透過GCT製程所設計之功率放大器與功率偵測器進行量測，並分析討論量測之結果。功率放大器在2.4GHz的P-1dB為22.3dBm，增益為19.5dB，效率為25%；在5.2GHz的P-1dB為21.6dBm，增益為5.8dB，效率為15%。功率偵測器的輸出電壓範圍約為0.7~1.9V。整體晶片面積為2×2mm2。

關鍵字

雙頻帶 ； 功率放大器 ； 功率偵測器

並列摘要

Base on dual-band matching network, this paper designed a dual-band (2.4/5.2GHz)power amplifier with power detector and bias control circuit by monolithic microwave integrated circuit (MMIC) technology. The specifications of designed power amplifier are fulfilled the requirements of WLAN standard. The large signal model of GaAs HBT supplied by GCT is used to simulate and analyze the performance of designed PA circuit. We measured the power amplifier and power detector that manufactured by GCT foundry, and discussed the performance. The P-1dB of the power amplifier is 22.3dBm, gain is 19.5 dB, and the efficiency is about 25% @ 2.4GHz. The P-1dB of the power amplifier is 21.6dBm, gain is 5.8 dB, and the efficiency is about 15% @ 5.2GHz.The voltage range of the power detector is about 0.7~1.9V. The chip size of the circuit is 2×2 mm2.

並列關鍵字

dualband ； power amplifier ； power detector

參考文獻

[1]Steve C. Cripps, “RF Power Amplifiers for Wireless Communications,” Artech House, 1999.

[2]C. Duvanaud, S. Dietsche, G.. Pataut, and J. Obregon,”High-Efficiency Class F GaAs FET Amplifiers Operating with Very Low Bias Voltages for Use in Mobile Telephones at 1.75 GHz,” IEEE Microwave and Guide Wave Letters,Vol. 3,Aug. 1993.

[3]Guillermo Gonzalez,”Microwave Transistor Amplifiers”,Prentice Hall, 1997.

[4] Frederick H. Raab, “Class-F Power Amplifiers with Maximally Flat Waveforms,” IEEE Trans. On MTT,vol. 45,1997.

[5]Marian Kazimierczuk, “Effects of the Collector Current Fall Time on the Class E Tuned Power Amplifier,” IEEE J. Sokid-State Circuits,Apr.1983.