應用於無線區域網路射頻發射機電路之研製

Design and Implementations of RF Transmitter Circuits for Wireless Communication Applications

陳韋廷(Wei-Ting Chen)

指導教授 ： 黃建彰

元智大學/工程學院/通訊工程學系/碩士(2004年)

摘要

本論文以GCT InGaP/GaAs HBT研製應用於IEEE 802.11 Wireless LAN發射機前端積體電路，包含功率放大器與混頻器設計。論文可分為兩部分，第一部分為功率放大器設計，考量無線區域網路OFDM信號對線性度的嚴苛要求，在設計中使用具線性化功能之主動式偏壓網路以提升其線性度，並針對線性度、多頻帶、高功率與增益控制不同需求設計適合之功率放大器；第二部份為混頻器設計，針對HBT高啟動電壓的缺點，使用電流摺疊的架構以降低操作電壓，並利用寬頻匹配的特性使電路能應用在不同的系統規格。

關鍵字

功率放大器 ； 混頻器 ； 積體電路 ； 發射機 ； 砷化鉀 ； 高功率 ； 線性度 ； 無線區域網路

並列摘要

This thesis presents the development of RFIC including power amplifiers (PA) and mixer for IEEE 802.11 WLAN RF front-end applications, with the GCT InGaP/GaAs HBT process. The thesis is divided into two parts－the first is the power amplifier design and second is the up-convert mixer. Owing to the crucial linearity demands of WLAN OFDM PA, the active bias circuit with linearizing scheme is utilized to enhance the linearity and output power simultaneously. The designed circuits are considered for various system requirements including linearity, multi-band, high output power and gain control facilities. The up-convert mixer is in the current-folded configuration to decrease the operation voltage, that HBT’s in general require high cut-in voltage for DC bias. The broad band characteristics for the mixer output match design satisfies the different band requirements for cellular and WLAN applications.

並列關鍵字

WLAN ； Transmitter ； Power amplifier ； Mixer ； HBT

參考文獻

[1] B. Razavi, RF Microelectronics, Prentice Hall, 1998.

[4] S. C. Cripps, RF Power Amplifiers for wireless communications, Artech House, Inc., 1999.

[7] 洪威，〈以MMIC製程延至具偏壓控制級功率偵測之2.4 GHz HBT功率放大器〉，元智大學碩士論文，2003。

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[11] Y. S. Noh, C. S. Park, “PCS/W-CDMA dual-band MMIC power amplifier with a newly proposed linearizing bias circuit,” IEEE J. Solid-State Circuits, vol. 37, pp. 1096-1099, Sept. 2002.