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  • 學位論文

電腦模擬輔助微熱壓印製程參數研究

Study of the manufacturing parameter in hot embossing processes with simulation

指導教授 : 徐澤志
共同指導教授 : 林俊源

摘要


微熱壓製程一般而言具有設備成本低、環境要求低、可製造高深寬比元件及可同時進行尺寸差異大的圖樣轉印,最重要的是不因光的特性而在尺寸上有所限制。現今文獻記載尺寸亦突破10nm,另有許多利用微熱壓印製程所製做出的產品也相繼被研究開發。本研究不論在實驗與模擬皆極欲探知製程參數中熱壓壓力與保壓時間所引起的潛變行為對於微熱壓製程的影響。在實驗方面,分別以兩種高分子材料及兩種初始膜厚進行不同壓力負載、保壓時間與模穴間距的壓印實驗,藉以瞭解潛變行為在不同製程條件下對充填率的影響。另配合FEM電腦模擬以潛變模型進行模擬分析,比對實驗與模擬中潛變行為的效應。

並列摘要


Hot embossing processes also be named nanoimprint lithography as a method to fabricate polymer structures . As well as we know it is a low cost , general applicability ,and high aspect ratio method . Many studies which success to make up products with hot embossing process were published . The creep effect is the most important thing that we want to know how powerful is it during embossing process . So this study try to discover that how embossing pressure , embossing time and pattern size to influence on hot embossing processes with experiments and simulation .

並列關鍵字

hot embossing processes simulation

參考文獻


1.S. Y. Chou, P. R. Krauss, and P. J. Renstrom, Imprint of sub-25 nm vias and trenches in polymer, Appl. Phys. Lett., Vol. 67, 3114-3116, 1995.
2.X.-J. Shen, Li-Wei Pan, and Liwei Lin, Microplastic embossing process: experimental and theoretical characterizations, Sensors and Actuators A, 428-433, 2002.
4. H. Cao , J. O. Tegenfeldt , R. H. Austin , and S. Y. Chou . Fabrication of 10 nm enclosed nanofluidic channels . Appl. Phys. Lett. 81 , 3058 , 2002
5. W. Zhang and S. Y. Chou . Fabrication of 60-nm transistors on 4-in. wafer using nanoimprint at all lithography levels . Appl. Phys. Lett. 83 , 1632 , 2003
6. K. A. Lister , S. Thoms , D. S. Macintyre , C. D. W. Wilkinson , and J. M. R. Weaver , Direct imprint of sub-10 nm features into metal using diamond and SiC stamped , 2004

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