本論文之研究主要包含超寬頻RF開關,可切換式頻帶低雜訊放大器以及微型化功率放大器,超寬頻射頻開關主要以基本的串聯式與並聯式的型態組成,再插入一個電感,提升整個頻帶隔離度,隔離度的模擬結果接近-60dB,插入損失也只有-2dB以上,晶片面積為0.31mm2。可切換式頻帶低雜訊放大器,使用current-reuse放大級架構,並且使用串聯共振電路在放大級架構,可以在有限功率消耗下達到最大增益輸出,在頻帶切換上使用一組中央抽頭電感及電晶體開關,達到最小面積的設計。量測方式以on wafer的形式操作,電壓操作在1V整體消耗功率為7.8mW,晶片面積為0.71 mm2,在輸入反射損失以及輸出反射損失皆小於10dB,增益為16.5 dB、18.5 dB、11.6 dB在2.4GHz、3.5 GHz、5.2 GHz,雜訊指數為5.9 dB、3 dB、3 dB在2.4GHz、3.5 GHz、5.2 GHz。微型化功率放大器為一個全積體化雙頻帶AB類的功率放大器,在偏壓電路上使用一個自繞電感以增加電流負載程度,然後在輸出匹配部分使用一個π型匹配網路在串聯一個電感達到兩個頻帶的最大功率輸出阻抗點,模擬結果為輸入反射損失小於-10 dB,輸出功率為19.2dBm、19.68dBm在2.4GHz、3.5 GHz,轉換效率為20.25%、22..4%在2.4GHz、3.5 GHz,晶片面積為1.15 mm2
This study included an ultra-wideband RF switch, a switchable frequency band low-noise amplifier, and a compact power amplifier. The ultra-wideband RF switch was composed of series type and shunt type. To increase isolation on the full frequency band, an inductor was inserted. The simulated isolation was approximately -60 dB, and insertion loss was above -2dB. The total chip size was 0.31 mm². A switchable frequency band low-noise amplifier with a series resonator increases gains at high frequency. To achieve a small chip size, this study used two center-tapped inductors and a switch. The power gain of the LNA is 16.5 dB at 2.4 GHz, 18.5 dB at 3.5 GHz, and 11.6 dB at 5.2 GHz. The noise figures are 5.9 dB at 2.4 GHz, 3 dB at 3.5 GHz, and 3dB at 5.2 GHz. The total chip area is 0.82*0.87 mm². The fully integrated power amplifier is class AB. To enable the device to tolerate a higher current flow, this study constructed inductors personally. A π type circuit and a center-tapped inductor were used for output matching, enabling the matching networks to achieve a small chip area. The output power of the PA is 19.2 dBm at 2.4 GHz and 19.68 dBm at 3.5 GHz. Efficiency is 20 % dB at 2.4 GHz and 22 % at 3.5 GHz. The total chip area is 0.971*1.185 mm².