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  • 學位論文

使用分散式低雜訊放大器與高頻補償電感混頻器應用於超寬頻系統接收機之前端射頻積體電路設計

The distributed low-noise amplifier and use peaking inductor technology mixer were applied to the design of the Receiver RF front-end for UWB system

指導教授 : 楊正任

摘要


本論文之UWB接收機降頻器是利用TSMC 0.18μm 1P6M CMOS製程研製其中包含三個實際製作完成之電路為3~10GHz寬頻低雜訊放大器與3~12GHz寬頻低雜訊放大器與2~12GHz具主動balun低電壓寬頻混頻器。3~10GHz 低雜訊放大器是採用兩級Distributed amplifier放大器架構配上Current-reused的架構,再搭配Peaking Inductor的技術,來達到寬頻、低雜訊指數、低功耗以及高增益等目標,此IC量測結果功率消耗為19.3mW、平均增益為16.31±1.5dB、雜訊指數平均為4dB,S11<-12dB及S22<-8.2B。3~12GHz 低雜訊放大器是採用第一次設計之電路所改良之電路,採用兩級Distributed amplifier放大器架構配上Current-reused的架構,再搭配Peaking Inductor的技術,在後級在串上一個Common-Source放大器,來達到低偏壓、低功耗、寬頻、低雜訊指數以及高增益等目標。此IC量測結果功率消耗為6.95mW、平均增益為11dB、雜訊指數平均為4dB,S11<-8.2dB及S22<-13dB。2~12GHz具主動balun低電壓寬頻混頻器是採用Folded-switching mixer架構並配合Peaking Inductor的技術加上與後級主動Balum器之整合,來達到寬頻、低偏壓以及高而平坦的增益等目標。此電路模擬結果平均增益為 21.07±0.6dB、雜訊指數為14.9~16.5dB,S11<-11.6dB及S33<-10dB,IIP3為-1.89~-1.8。

關鍵字

超寬頻 低電壓 高增益 分散式

並列摘要


This paper uses a TSMC 0.18 μm CMOS process to design a receiver for UWB systems. Three manufactures were commissioned to create the electric circuits 3~10GHz LNA, 3~12GHz LNA, and a 2~13GHz mixer. To achieve the goals such as a wide-band frequency, low power consumption, low noise figure, and high returns, the 3~10 GHz LNA adopts the current-reuse structure and utilizes a distributed amplifier and peaking inductor technology. The measurement results demonstrate the following performances of the design: The total power consumption is 19.3 mW under a 1.2 V supply voltage; the forward gain is 16.31±1.5 dB for a 3~10 GHz wideband frequency; the noise figure average is 4 dB; the input return loss is under -12dB, and the output return loss is under -8.2dB. The 3~12 GHz LNA also adopts the current-reuse structure and utilizes a distributed amplifier and peaking inductor technology. The measurement results demonstrate the following performances of the design: The total power consumption is 6.95 mW under a 0.6 V and 0.8 V supply voltage; the forward gain is 11 dB for a 3~12 GHz wideband frequency; the noise figure average is 4 dB; the input return loss is under -8.2 dB, and the output return loss is under -13 dB. Additionally, for the portion of the mixer that uses the peaking inductor technology and the folded-switching mixer for the low voltage supply, the forward gain is 21.07±0.6 dB for a 2~13 GHz wideband frequency; the noise figure is 14.9~16.5 dB; the input return loss is under -11.6 dB; the output return loss is under -10 dB; and the IIP3 is -1.89~-1.8 dBm.

並列關鍵字

UWB low-voltage high-gain distributed

參考文獻


[4] B.R., Design of Analog CMOS Integrated Circuits, McGrawHill
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[6] Z.Y. Huang, C.C. Huang, C.C. Chen, C.C. Hung, ” A 1V CMOS LOW-NOISE AMPLIFIER WITH INDUCTIVE RESONATED FOR 3.1-10.6GHz UWB WIRELESS RECEIVER”, SOC Conference, 2007 IEEE International 26-29 Sept. 2007 Page(s):15 - 18
[7] A.I. and A.A. Abidi, “A 3–10-GHz Low-Noise Amplifier With Wideband LC-Ladder Matching Network,” IEEE Journal of Solid-State Circuits, Vol. 39, pp.2269-2277, December 2004.
[8] A.I. and A.A. Abidi, “A 3–10-GHz Low-Noise Amplifier With Wideband LC-Ladder Matching Network,” IEEE Journal of Solid-State Circuits, Vol. 39, pp.2269-2277, December 2004.

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張素菁(2009)。台北市國中學生成癮物質使用行為與社會影響因素、風險知覺之關係研究〔碩士論文,國立臺灣師範大學〕。華藝線上圖書館。https://www.airitilibrary.com/Article/Detail?DocID=U0021-1610201315150595

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