調控脈衝電壓及脈衝波間隔時間對高功率脈衝磁控濺鍍系統製備氮化鈦薄膜性質研究

TiN thin film produced by High Power Impulse Magnetron Sputtering (HiPIMS) : Effect of varying pulse target voltage and pulse off-time

蘇政揚(Cheng-Yang Su)

指導教授 ： 喻冀平 ； 黃嘉宏

國立清華大學/原子科學院/工程與系統科學系/碩士(2011年)

摘要

The main objective of this study was to investigate the effect of varying pulse target voltage and pulse off-time on the composition, structures, mechanical properties and electrical properties of thin films produced by High Power Impulse Magnetron Sputtering (HiPIMS) technique. TiN films were deposited by HiPIMS system on (100) Si wafer, the structure and properties of deposited films were characterized using X-ray diffraction, scanning electron microscopy, nanoindentation, four-point probe, laser curvature measurement and Rutherford backscattering spectroscopy. The results showed that the crystallinity, grain size and the texture coefficient of (111) plane all increased when pulse target voltage increased from 550 V to 750 V. The packing factor increased significantly with raising pulse target voltage and reached 0.99. Hardness values, ranging from 16~25 GPa, indicated that hardness of the films was highly related to the pulse target voltage. The residual stress increased linearly from -4.76 to -7.88 GPa. When pulse off-time increased from 800 μs to 1700 μs, the crystallinity was improved and the grain size increased, too. However, the residual stress increased, too. The peak target current increased when extending pulse off-time which indicated that adjusting pulse off-time can also affect the plasma density.

關鍵字

高功率脈衝磁控濺鍍 ； 氮化鈦 ； 靶材脈衝電壓 ； 脈衝間隔時間

並列摘要

本研究中成功的使用高功率脈衝磁控濺鍍技術 (HiPIMS) 鍍著奈米晶
氮化鈦薄膜於P型 (100) 矽基板上。本研究主要的目的為研究調控脈衝靶材
電壓及脈衝間隔時間對高功率脈衝磁控濺鍍技術鍍著之氮化鈦薄膜於成 分、結構、機械性質與導電性質上的影響。此研究可幫助我們了解高功率 脈衝磁控濺鍍應用於鍍膜製程上的特性。本研究的結果顯示,薄膜 (111)
平面的織構係數、結晶性以及晶粒大小皆隨著脈衝靶材電流由 550 V 上升 至 750 V ,或脈衝間隔時間由 800 μs 上升至 1700 μs 而增加。提昇脈衝靶
材電流能夠使得薄膜堆積因子顯著的增加直到其值接近於一,亦即塊材的 程度。在硬度方面,約介於14~25
GPa間,並與脈衝靶材電壓高度相關, 但對脈衝間隔時間的變化則不明顯。本實驗中所有試片的殘餘應力皆為壓 縮應力,且增加脈衝靶材電壓或脈衝間隔時間都會使殘餘應力增加。當脈 衝間隔時間增加時,靶材極限電流議會增加,顯示電漿氣體的補充足夠與 否可能是此情況下影響電漿密度的重要因素。在本實驗中,增加脈衝靶材 電壓與脈衝間隔時間都能使電漿密度增加,並因此能鍍著具優異機械與介 電性質的氮化鈦薄膜。

並列關鍵字

HiPIMS ； TiN ； Pulse target voltage ； Pulse off-time

參考文獻

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