- 學位論文
應用不同氧化製程於閘堆疊對鍺鰭式電晶體電特性之影響
Effects of various oxidation processes for gate stack on electrical characteristics of Ge FinFET.
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並列摘要
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延伸閱讀
- Zhang, J. L. (2018). 高鍺組成之矽鍺合金材料以低壓氧化成長介電層與其選擇性氧化機制之研究 [master's thesis, National Chiao Tung University]. Airiti Library. https://www.airitilibrary.com/Article/Detail?DocID=U0030-0205201911133103
- Tseng, C. H. (2006). 鍺通道電晶體及金氧半電容之應變效應探討 [master's thesis, National Taiwan University]. Airiti Library. https://doi.org/10.6342/NTU.2006.10102
- 劉冠廷（2020）。應用後氧化製程以改善n通道鍺金氧半場效電晶體電特性之研究〔碩士論文，國立清華大學〕。華藝線上圖書館。https://www.airitilibrary.com/Article/Detail?DocID=U0016-2502202114233653
- 簡佑亘（2021）。超臨界流體製程對鍺互補式金氧半鰭式電晶體電特性研究之影響〔碩士論文，國立清華大學〕。華藝線上圖書館。https://www.airitilibrary.com/Article/Detail?DocID=U0016-0203202211540034
- Yu, C. Y. (2019). Investigation of HfO2-based Gate Stack on SiGe by Using NH3 Plasma Treatment and High Vacuum Annealing [master's thesis, National Chiao Tung University]. Airiti Library. https://www.airitilibrary.com/Article/Detail?DocID=U0030-0306202016364376