- 學位論文
反轉式與無接面式奈米薄片通道多閘極電晶體與非揮發性記憶體之研究
Study of Inversion and Junctionless Nanosheet Channel on Multi-gate Field Effect Transistors and Non-Volatile Memory Devices
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並列摘要
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延伸閱讀
- 劉冠呈 (2013). 反轉式及無接面式雙電晶體非揮發性記憶體之研究 [master's thesis, National Tsing Hua University]. Airiti Library. https://doi.org/10.6843/NTHU.2013.00451
- Yang, C. K. (2010). 新穎環繞式閘極複晶矽奈米線於薄膜電晶體非揮發性記憶體之特性分析 [master's thesis, National Chiao Tung University]. Airiti Library. https://doi.org/10.6842/NCTU.2010.00562
- Chung, M. H. (2014). 具矽奈米晶體之環繞式閘極無接面奈米線非揮發性記憶體研究 [master's thesis, National Tsing Hua University]. Airiti Library. https://doi.org/10.6843/NTHU.2014.00317
- 王昭龍（2012）。具有二維晶界控制之多晶矽薄膜與奈米線電晶體於非揮發性記憶體元件之應用與研究〔博士論文，國立交通大學〕。華藝線上圖書館。https://doi.org/10.6842/NCTU.2012.00099
- Chen, C. Y. (2014). Effects of Bandgap-engineered Dielectrics, Polycrystalline Nanowire Channel and Junctionless Configuration on 3D Charge-trapping Flash Memory Devices [doctoral dissertation, National Tsing Hua University]. Airiti Library. https://doi.org/10.6843/NTHU.2014.00609