以矽化物為催化劑與源極汲極材料於自動對準奈米碳管場效電晶體之應用

Silicide as a Catalyst and Source/Drain Electrode for Self-aligned Carbon Nanotube Field-Effect Transistor

楊偉昌(Wei-Chang Yang)

指導教授 ： 游萃蓉

國立清華大學/工學院/材料科學工程學系/碩士(2006年)

https://doi.org/10.6843/NTHU.2006.00629

摘要

Single-walled carbon nanotubes (CNTs) are synthesized between predefined catalytic silicide pads by chemical vapor deposition (CVD) from 600 C to 900 C. Self-assembled field-effect transistors fabricated with these controlled-growth nanotubes between silicide electrodes show high-level compatibility with current silicon CMOS process. The silicide pads are formed by thermal annealing process of multi-layer thin film consisting of catalytic metal, supporting materials, and silicon with various crystalline structures. Before the synthesis process, silicide pads are pretreated by thermal and plasma to enhance its catalytic ability. Scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HR-TEM), Raman spectroscopy, and electrical measurement are employed to characterize the physical, chemical, and electrical properties of the self-aligned carbon nanotube field-effect transistors. Furthermore, sensor applications will be discussed with these self-assembled field-effect transistors.

關鍵字

奈米碳管 ； 矽化物 ； 化學氣相沉積

並列摘要

無資料

並列關鍵字

Carbon nanotube ； Silicide ； Chemical vapor deposition

參考文獻

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