改善CMOS-MEMS Pirani 真空計感測範圍之設計

本研究採用CMOS標準製程(TSMC 0.35μm 2P4M Process)並配合後製程金屬濕蝕刻來開發CMOS-MEMS Pirani真空計(Pirani vacuum gauge)。Pirani真空計結構由熱源(Heater)與散熱片(Heat sink)所組成，其感測原理為先對熱源加熱，而藉由不同壓力下之空氣熱傳導特性，使熱源產生溫度變化進而造成阻值改變，藉由阻值改變來判定待測系統之真空度。相較於先前實驗團隊所開發的Pirani真空計[1]，本研究針對低壓感測範圍設計了兩種不同結構之真空計元件，一種為蛇狀(Meander-shaped)結構，另一種為螺旋狀(Spiral-shaped)結構。蛇狀結構主要是用來探討，結構內部電性並聯(Parallel connection)與串聯(Series connection)在不同熱源長度下對於元件性能造成的影響。前面第一種結構所探討之結果引入螺旋狀結構設計，主要特點相較於先前實驗團隊所設計之真空計，有著更小的元件面積(Footprint)，除此之外還保有一樣低壓感測範圍的優點；整合上述，本研究針對改善低壓感測範圍相較於實驗團隊先前提升熱阻(Thermal resistance)之設計提出了不同種解決方案，經過量測驗證後，確實能提升Pirani真空計低壓感測性能。關鍵字：CMOS-MEMS、Pirani真空計、熱源、散熱片、蛇狀、螺旋狀、並聯、串聯、熱阻

關鍵字

CMOS-MEMS ； Pirani真空計；熱源；散熱片；蛇狀；螺旋狀；並聯；串聯；熱阻

並列摘要

This study is based on CMOS standard process (TSMC 0.35μm 2P4M process) with post-process, metal wet etching, to develop Pirani vacuum gauge. Generally, Pirani vacuum gauge is composited of heater and heat sink. The sensing theory is based on heating to heater, the temperature increase will result in resistance change because of thermal conductive property of air under different pressure. Due to this property, we can detect pressure change. Compared to previous Pirani vacuum gauge development [1], this study focuses on develop two types vacuum gauge devices with varying structures, Meander-shaped and Spiral-shaped, which can sense low pressure. We investigate Meander-shaped device parallel connection and series connection of inner structure under different heat length which will affect device performance. By the experiment results, we followed investigating Spiral-shaped device. Compared to previous work, it has favor characterization, smaller footprint. Besides, it also has advantage of sensing low pressure. Unlike previous researches which increase thermal resistance this study integrate these properties and improve the device performance. The results show that this strategy can actually promote vacuum gauge performance. Key words：CMOS-MEMS、Pirani vacuum gauge、Heater、Heat sink、Meander-shaped、Spiral-shaped、Parallel connection、Series connection、Thermal resistance

並列關鍵字

CMOS-MEMS ； Pirani vacuum gauge ； Heater ； Heat sink ； Meander-shaped ； Spiral-shaped ； Parallel connection ； Series connection ； Thermal resistance

參考文獻

[1] 孫翊強, “微型晶片級Pirani真空計之設計與實現,” 清華大學碩士論文, 2014.

[4] G. K. Fedder, “CMOS-based sensors,” IEEE Sensors, Oct. 30 2005, pp.125-128

[8] H. Baltes, O. Brand, A. Hierlemann, D. Lange, and C. Haleitner, “CMOS-present and future,” IEEE International Conference on Micro Electro Mechanical System, Las Vegas, NV., Jan., 2002, pp.459-466.

[10] J. Chae, H. Kulah, and K. Najafi, “A CMOS-compatible high aspect ratio silicon-on-glass in-plane micro-accelerometer,” J. Micromech. Microeng., vol.15, pp.336-345, 2005.

[11] J. M. Bustillo, R. T. Howe, and R. S. Muller, “Surface micromaching for microelectromechanical systems,” Proceedings of the IEEE, vol.86, pp.1552-1574, 1998.

國際替代計量

改善CMOS-MEMS Pirani 真空計感測範圍之設計

全文下載

主題瀏覽