尖角穿隧二極體特性分析與量測之研究

Measurement and Characterization of Tip Tunneling Diode

辜民翔(Min-Siang Gu)

指導教授 ： 金雅琴

國立清華大學/電機資訊學院/電子工程研究所/碩士(2014年)

摘要

本篇論文討論使用0.18微米嵌入式記憶體製程來製作尖角穿隧二極體之特性，利用尖角所產生得電場增強效應造成順偏逆偏I-V特性上的差別，並利用模擬和實際量測來驗證其特性。尖角穿隧二極體導通機制為F-N穿隧，在足夠大的電場下尖角穿隧二極體即能導通，不像一般二極體需要載子的注入使其導通，將可利於高速切換的應用上；同時，其電容值並不隨偏壓改變；在溫度變化下，其電流電壓特性之穩定度高。

關鍵字

二極體 ； 電場增強 ； 尖角結構 ； 嵌入式記憶體 ； 可靠度

並列摘要

This work presents a tip tunneling diode by 0.18µm embedded flash process. The　tip structure is employed to create electrical field enhancement effect, resulting in current difference between forward and reverse bias. Thorough, measurement and simulation of the tunneling diodes are included in this work. Significant conduction current through tunneling can be obtained with high enough electric field. Unlike a conventional diode which requires carrier injection into the junction at forward-bias operation, tunneling diode can be advantageous for speed switching. Capacitance is relatively independent of bias voltage. In addition, its IV characteristics remains very stable with temperature change.

並列關鍵字

diode ； Field enhancement ； tip structure ； embedded flash process ； Reliability

參考文獻

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