具新穎壓力計之CMOS-MEMS 單晶整合環境感測中樞

CMOS-MEMS monolithic integration for environmental sensing hub with pressure sensor structure design

林詠虔(Yung-Chian Lin)

指導教授 ： 方維倫

國立清華大學/工學院/奈米工程與微系統研究所/碩士(2020年)

摘要

本研究設計與開發一環境感測晶片，並透過TSMC所提供之 CMOS 0.18µm 1P6M 平台和相關後製程實現此晶片。此晶片包含壓力、濕度和溫度共三種感測單元。其主要目標為設計三種感測元件可成功運作之前提下互相兼容之製程流程和結構設計。此外，本研究將以壓力感測器為出發點，將透過對壓力感測元件進行肋狀結構之設計降低CMOS多膜層堆疊之薄膜殘餘應力影響以提升壓力感測器之靈敏度。在元件之設計考量中，由於壓力感測元件和溫度感測元件所需之金屬層較少，在本研究中將兩者利用CMOS多層金屬之特點進行垂直整合達到較好之空間利用。壓力感測元件利用Parylene-C高分子沉積封腔製程完成絕對型壓力感測器之製作使環境感測晶片僅需單面製程。元件經過先前設計之流程和結構後對各自感測元件之性能進行量測後皆有成功運作，證實了本研究提出之利用CMOS平台進行單晶整合之設計的可行性。此外，本研究亦初步成功驗證垂直整合三種感測元件可行性，可以藉此縮減使用面積提升多膜層堆疊使用效率。

關鍵字

環境感測器 ； 單晶整合 ； 垂直整合 ； 壓力感測器 ； 濕度感測器 ； 電阻式溫度感測器 ； 二極體式溫度感測器 ； 聚酰亞氨 ； 肋狀結構

並列摘要

This research presents a monolithic integration of pressure, humidity, and temperature sensing units to form an environmental sensing hub. The proposed device is realized by TSMC 0.18µm 1P6M CMOS platform and in-house post-CMOS processes. The main target is to design processes and structure to integrate three different sensing units without interfering each sensors’ function. Furthermore, corrugated structure is implemented for pressure sensor to reduce residual stress for better sensitivity. To fully utilize the multilayers of CMOS platform, pressure sensor is vertically integrated with temperature sensor. The absolute pressure sensor is sealed by coating parylene-C which makes whole fabrication a single side microfabrication process. Measurement results show that all three sensing units can operate successfully. Furthermore, this research proves the possibility of vertically integration of three kinds of sensor to reduce footprint and fully utilize the multilayers of CMOS platform.

並列關鍵字

CMOS-MEMS ； environmental sensing hub ； monolithic/vertical integration ； capacitive pressure sensor ； capacitive humidity sensor ； resistive temperature sensor ； diode temperature sensor ； polyimide ； parylene-C ； corrugated structure

參考文獻

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