以溶膠凝膠法製備鋁摻雜氧化鋅薄膜之研究

Al doped ZnO films prepared by Sol-gel method

方建智(Jian-Zh Fang)

指導教授 ： 許經夌

中原大學/理學院/物理研究所/碩士(2012年)

https://doi.org/10.6840/cycu201200083

摘要

本研究利用溶膠凝膠法(Sol-gel)旋轉塗佈於玻璃基板上，再經過退火(anneal)處理，製備氧化鋅(ZnO)及氧化鋁鋅(AZO)薄膜，探討其旋轉塗佈轉速、退火溫度、退火氣氛對於氧化鋅薄膜所造成的影響，再探討摻雜不同重量百分比的氧化鋁鋅薄膜特性。
實驗中將薄膜以掃描式電子顯微鏡(Scanning Electron Microscope，SEM)進行表面形貌分析，X 光能譜分析儀(Energy Dispersive X-ray Spectrometer，EDS)量測其成分，以X射線繞射儀(XRD)檢測其晶相，光致螢光光譜量測(photoluminescence，PL)檢測其發光特性，四點量測(Van der pauw method)測其電阻率，紫外光/可見光分光光譜儀(UV/VIS spectrometer)量測薄膜穿透率，之後利用各種機制解釋上述量測到的結果。
成長於玻璃基板之純氧化鋅，電阻率極高，高達30 Ω-cm，經過摻雜後電阻率可下降到0.02 Ω-cm，在可見光區(300~700nm)的薄膜穿透率也可維持在80%以上，而為了使電阻率在下降，我們嘗試以氬氣氣氛下退火增加其氧空缺，純氧化鋅薄膜電阻率成功下降至8 Ω-cm，而氧化鋁鋅薄膜也成功降低至3×10-3 Ω-cm，可見光區的穿透率一樣可維持在80%以上。

關鍵字

溶膠凝膠 ； 旋轉塗佈 ； 氧化鋁鋅

並列摘要

In this study, we used the sol-gel method to prepare ZnO films and Al doped ZnO films. We investigated how the speed of spin coating, annealing temperature and annealing atmosphere affect the ZnO films, and how the Al doping affects the AZO films.

In our experiments, we used scanning electron microscope (SEM) to analyze surface morphology, energy dispersive X-ray spectrometer (EDS) to measure sample composition, X-ray diffraction (XRD) to analyze crystal phase, photoluminescence (PL) to measure band gap, the van der Pauw method to measure resistivity, and UV/VIS spectrometer to measure transmittance of the ZnO and AZO films. Then we used these results to explain our experimental data.

The resistivity of pure ZnO films prepared on glass substrates is about 30 Ω-cm. It reduces to about 0.02 Ω-cm after Al doping, and the transmittance of the films is higher than 80% in visible region. To decrease the resistivity, we annealed the sample in Ar to increase the vacancies of oxygen. Then we found that the resistivity of pure ZnO films decreases to ~8 Ω-cm and the resistivity of AZO films decreases to ~3×10-3 Ω-cm. The transmittance is still kept higher than 80%.

並列關鍵字

Sol-gel ； spin coating ； AZO

參考文獻

19. 蔡裕榮, “以溶膠凝膠法製備透明導電氧化物薄膜的探討", 國立中正大學化學研究所, 碩士論文(2002)

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