矽基板上低溫沉積單晶氮化鋁薄膜之研究

Fabrication Study of Single crystal AlN thin film on Silicon Substrates by low temperature deposition

陳傑賀(Jie-He Chen)

指導教授 ： 高慧玲

中原大學/電機資訊學院/電子工程研究所/碩士(2018年)

https://doi.org/10.6840/cycu201800503

摘要

本論文討論氮化鋁薄膜和矽基板之間的晶格匹配度可以透過緩衝層去改善，藉由成長不同的緩衝層在矽基板上，改變在低溫成長環境下氮化鋁薄膜的品質，並分析氮化鋁薄膜的結晶品質。
氮化鋁薄膜的結晶結構透過X光繞射來檢驗其品質，XRD分析在不同緩衝層上成長AlN薄膜之(0002)面的結晶品質，從XRD 的ω-scan可以發現在二硫化鉬緩衝層上方的氮化鋁薄膜(0002)面的半高寬值(FWHM)，僅有0.37度，相較於直接成長在矽基板上的3.144度，明顯下降了不少，並且也從Phi-scan及Pole figure的結果可以得知，我們在二硫化鉬緩衝層上的氮化鋁薄膜是單晶結構。
使用不同的緩衝層可以改善在低溫環境下成長AlN薄膜在Si基板的問題，綜合以上結果，我們可以在Si基板上先成長二硫化鉬緩衝層，可以改善上方AlN薄膜的品質。

關鍵字

低溫濺鍍 ； 單晶氮化鋁 ； 二硫化鉬緩衝層

並列摘要

In this thesis, the crystalline quality of low temperature grown Aluminium Nitride thin films prepared on silicon substrates were improved a lot using various buffer layers. Single crystalline AlN films can first time be obtained using MoS2 as buffer layer between AlN and Si substrates.
From XRD ω-2 scan, the (0002) AlN was observed for AlN on Si with various buffer layers, indicating the preferred orientational deposition. However, the rocking curve measurements shows that the full-width at half maximum (FWHM) of (0002)-AlN is only 0.37 degree for AlN deposited on Si with MoS2 buffer layer. This is significantly smaller than that of the AlN films grown on Si substrates without buffer . Furthermore, from the results of Phi-scan, and Pole figure investigation, it was found that the AlN thin film on MoS2 buffer layer is single crystalline, which is first time reported for AlN films deposited on Si (100) substrates.

並列關鍵字

low-temperature sputtering ； single crystalline AlN ； MoS2 buffer layer

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