單晶氮化鋁薄膜於藍寶石基板上低溫沉積製程之最佳化研究

Invesgation on the optimized process for the low-temperature deposition of single crystalline AlN films on sapphire substrates

許育凱(Yu-Kai Hsu)

指導教授 ： 高慧玲

中原大學/電機資訊學院/電子工程研究所/碩士(2018年)

https://doi.org/10.6840/cycu201800684

摘要

本論文在迴旋濺鍍系統低溫濺鍍三種不同製程的單晶氮化鋁薄膜沉積在藍寶石基板上，藉由不同的製程找尋能提升氮化鋁薄膜品質之最佳化製程，並且分析氮化鋁薄膜晶體結構與結晶品質以驗證。
本實驗樣品皆透過X光繞射量測，顯示氮化鋁薄膜結晶皆為c軸從優取向，並透過TEM電子繞射圖證實為單晶結構；使用X-ray ω-scan量測AlN(0002)搖擺曲線之半高寬值，值隨著製程的不同從0.4°降至0.08°，並從TEM之明暗場影像圖估算其差排密度，得知以全氮氣濺鍍之AlN製程確實可以提升單晶氮化鋁薄膜的品質。

關鍵字

低溫濺鍍 ； 單晶氮化鋁 ； 藍寶石基板

並列摘要

In order to improve the single crystalline quality of the AlN films on sapphire substrates, three kinds of deposition process using low temperature helicon sputtering system were employed, and the optimized process was found based on the current results in this thesis.
All samples prepared on sapphire substrates were textured with c-axis preferred orientation, characterized by X-ray diffractometer. The single crystalline characteristics of AlN films were confirmed by SAD patterns of TEM. The full-width of half maximum (FWHM) of the (0002)-AlN rocking curve decreases from 0.4° to 0.08° for the films grown with all nitrogen sputtering gas. The dislocation density observed by the bright-field and dark-field TEM images also supported the results and demonstrated that the all nitrogen sputtering process enhances the quality of single crystalline AlN films on sapphire substrates.

並列關鍵字

low-temperature sputtering ； single crystalline AlN ； sapphire substrate

參考文獻

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