低溫微晶矽薄膜開發及其薄膜電晶體之應用

The Study of Microcrystalline Silicon Thin Films at Low Temperature and its Application to Thin Film Transistors

楊世豪(Shih-hao Yang)

指導教授 ： 林烱暐

大同大學/電機資訊學院/光電工程研究所/碩士(2008年)

摘要

在本論文中使用矽烷、氫氣和氬氣三種氣體混合的方法在低溫下沈積微晶矽薄膜（110～300度）。根據實驗結果的分析，氬氣的加入有助於薄膜的結晶性提升，推論為氬氣在電漿中解離後，可以提供微晶矽薄膜結晶時所需的能量。最後我們將兩百度所沈積出的微晶矽薄膜，使用“反堆疊式”結構製作薄膜電晶體，電子遷移率可高於2 cm2/V-s。

關鍵字

薄膜電晶體 ； 微晶矽

並列摘要

In this thesis, microcrystalline silicon films are deposited at low temperature (110~300℃) from silane, highly diluted in hydrogen-argon mixtures. Argon addition during the deposition allows to increasing the crystallinity. Based on the experimental results, it is proposed that crystallization of μc-Si:H is mediated by the energy transferred from energetic argon atoms. For thin film transistors processed in the bottom gate configuration at 200℃, showing the mobility higher than 2 cm2/V-s.

並列關鍵字

Microcrystalline Silicon ； Thin Film Transistors

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