以二氧化錫薄膜製作陣列式酸鹼感測元件之研究

Study and fabricate on SnO2 pH array sensor

陳政成(Zheng-Cheng Chen)

指導教授 ： 熊慎幹

中原大學/工學院/電子工程研究所/碩士(2003年)

https://doi.org/10.6840/cycu200300289

摘要

離子感測器，主要有分三部分：感測器、參考電極與讀出電路三部份。於本論文中，首先討論以陶瓷界面製作參考電極之特性並成功地和商品化參考電極相互比較；並嘗試改進二化錫氧薄膜延伸式離子感測場效電晶體(EGFET)之量測特性，也成功的得到一較佳元件特性的製程；將此製程條件結合光阻剝離法製程，製作一「製作陣列式酸鹼感測元件」，其中並就感測器本身之相關製程方面的應用作探討，只要配合上適當之讀出電路即成為一完整的陣列式感測器架構。

關鍵字

陣列式酸鹼感測元件 ； 光阻剝離製程 ； 延伸式離子感測場效電晶體 ； 參考電極 ； 二氧化錫

並列摘要

The ion selective electrode composes of three parts：sensors, reference electrodes and readout circuit. In this thesis, the ceramic reference electrode was made and compared with the commercial reference electrode. And a manufacturing processing of high performance SnO2 extended gate ion sensitivity field effect transistor (EGFET) was found and investigated. This manufacturing processing was compound with the photoresist lift-off processing to make a “SnO2 pH array sensor”. The characteristics of the SnO2 pH array sensor were studied. Matching a suitable read-out circuit it was the array sensor.

並列關鍵字

pH array sensor ； photoresist lift-off processing ； reference electrode ； EGFET ； SnO2

參考文獻

[1] P. Bergveld, “Development of an ion-sensitive solid-state device for neurophysiological measurements”, IEEE Transactions on Biomedical Engineering, BME-17, pp.70-71, 1970.

[2] Manuela Adami, Dario Alliata, Corrado Del Carlo, Mauro Martini, Luciana Piras, Marco Sartore, Claudio Nicolini, “Characterization of silicon transducers with Si3N4 sensing surfaces by an AFM and a PAB system”, Sensors and Actuators B, Vol. 24-25,pp.889-893, 1995.

[3] A. S. Poghossian, “The super-nernstian pH sensitivity of Ta2O5-gate ISFETs”, Sensors and Actuators B, Vol. 7, pp.367-370, 1992.

[4] T. Katsube, I. Lauks, J.N. Zemel, “pH-sensitive sputtered iridium oxide films”, Sensors and Actuators B, Vol. 2, pp.399-410, 1982.

[5] S. D. Collins, “Practical limits for solid-state reference electrodes”, Sensors and Actuators B, Vol. 10, pp.169-178, 1993.