α相碘化汞多晶薄膜成長與物性分析

A Study on Growth and Characterization for α-HgI2 Polycrystalline Films

施誠琮(Chen-Tsung Shin)

指導教授 ： 邱寬城

中原大學/理學院/應用物理研究所/碩士(2003年)

https://doi.org/10.6840/cycu200300676

摘要

本文利用自組式油浴爐成長系統，以物理汽相沉積法( PVD )，並藉由控制系統內溫度分佈，成長α相碘化汞(α-HgI2 )多晶薄膜。在表面形貌與薄膜結晶度方面，利用SEM與XRD做分析，並以此為依據，改變溫度設置，成長出較好條件下的α-HgI2多晶薄膜。在電性量測方面，利用光電導量測，觀察光入射在碳極接面與無碳極接面下，以及不同方向偏壓下，其能隙隨溫度的變化。並與α-HgI2單晶在電場垂直c軸與電場平行c軸的光電導頻譜做比較。

關鍵字

光電導量測 ； α相碘化汞

並列摘要

By using an oil-bath furnace growth system and by varying the temperature profile inside the furnace, α-HgI2 polycrystalline films are prepared by physical vapor deposition (PVD). The surface morphology and crystallinity for the as-grown α-HgI2 polycrystalline films are examined by SEM and XRD, and accordingly, the best growth conditions for α-HgI2 polycrystalline films in this system are found. The temperature dependence of band gap deduced from photoconductivity spectra with photon incident to the simple α-HgI2 surface and to the carbon electrode-α-HgI2 surface with different bias directions is measured. In addition, we compare the photoconductivity spectra of α-HgI2 polycrystalline films with that of α-HgI2 single crystals.

並列關鍵字

photoconductivity ； α-HgI2

參考文獻

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