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  • 學位論文

碘化汞多晶薄膜之介電常數與熱誘發電流的量測

Dielectric Constant and Thermally Stimulated Current Measurement for α-HgI2 Polycrystalline Films

指導教授 : 邱寬城

摘要


本實驗利用油浴爐成長系統,以物理汽相沉積法( PVD ),並藉由控制粉末端和基板端的溫度,以成長α相碘化汞多晶薄膜。利用掃瞄式電子顯微鏡( SEM )與X-ray繞射( XRD )實驗來探討薄膜的表面形貌與結晶度。在電性量測方面,利用精密分析儀來量測α相碘化汞多晶薄膜的電阻率與介電常數。另外,由熱誘發電流( TSC )量測來分析α相碘化汞多晶薄膜的載子捕捉能階和捕捉機制。

並列摘要


In this study, by controlling the temperatures of the source powder side and of the substrate side in bath furnace, α-HgI2 polycrystalline films are prepared by physical vapor deposition. The surface morphology and the degree of crystallinity of the as-grown α-HgI2 polycrystalline films are characterized by scanning electron microscopy and X-ray diffraction, respectively. For electrical properties, resistivity and dielectric constant measurements by Precision Component Analyzer. Furthermore, thermally stimulated current measurements are performed to reveal the characters of deep-trapping levels.

參考文獻


16.Han-Tang Zhou, Cheng-Hsu Lee, Jia-Ming Chung, Chen-Tsung Shin, Kuan-Cheng
17.Chen-Tsung Shih, Tang-Jung Huang, Ying-Zi Luo, San-Min Lan and Kuan-Cheng
31.周漢唐, α相碘化汞電性及輻射偵測特性分析, 中原大學應物所, 中壢 (2002).
32.施誠琮, α相碘化汞多晶薄膜成長與物性分析, 中原大學應物所, 中壢 (2003).
33.黃堂榮, 碘化汞多晶薄膜之熱誘發電流與持續性光電導的量測, 中原大學應物所, 中

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