碘化汞多晶薄膜之熱誘發電流與持續性光電導的量測

Thermally Stimulated Current and Persistent Photoconductivity Measurement for α-HgI2 Polycrystalline Films

黃堂榮(Tang-Jung Huang)

指導教授 ： 邱寬城

中原大學/理學院/應用物理研究所/碩士(2005年)

https://doi.org/10.6840/cycu200500289

摘要

本實驗利用物理汽相沉積法(PVD)，並藉由控制粉末端和基板端的溫度，以成長α相碘化汞多晶薄膜。由掃瞄式電子顯微鏡(SEM)與X-ray繞射(XRD)實驗來探討薄膜的表面形貌與結晶度。在電性量測方面，藉由熱誘發電流(TSC)量測來分析α相碘化汞多晶薄膜的載子捕捉能階和捕捉機制。另外，經由變溫的光電導頻譜，觀察α相碘化汞多晶薄膜能隙隨溫度的變化情形。最後，利用室溫附近的持續性光電導(PPC)量測來探討電流衰減的行為與機制。

關鍵字

碘化汞 ； 熱誘發電流

並列摘要

In this study, by controlling the temperatures of the source powder side and of the substrate side, α-HgI2 polycrystalline films are prepared by physical vapor deposition (PVD). The surface morphology and the degree of crystallinity of the as-grown α-HgI2 polycrystalline films are characterized by scanning electron microscopy (SEM) and X-ray diffraction (XRD), Respectively. For electrical properties, thermally stimulated current (TSC) measurements are performed to reveal the characters of deep-trapping levels. Furthermore, the temperature dependence of band gap deduced from photoconductivity (PC) spectra is measured, and the persistent photoconductivity (PPC) decay is studied.

並列關鍵字

HgI2 ； Thermally Stimulated Current

參考文獻

29.周漢唐, α相碘化汞電性及輻射偵測特性分析, 中原大學應物所, 中壢 (2002).

30.施誠琮, α相碘化汞多晶薄膜成長與物性分析, 中原大學應物所, 中壢 (2003).

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