非重疊佈植N型金氧半場效電晶體通道擊穿效應之模擬研究

Simulation of Punch Through Effect in Non-overlapped Implantation nMOSFETs

楊志偉(Chih-Wei Yang)

指導教授 ： 鄭湘原

中原大學/工學院/電子工程研究所/碩士(2009年)

https://doi.org/10.6840/cycu201100174

摘要

記憶體的發展一直是整個半導體工業的一項重要指標，在製程技術及性能的提昇上更是一個挑戰的目標，近年來，隨著可攜式產品的普及，非揮發性記憶體在半導體記憶元件的研究與發展上，其所扮演的角色愈來愈重要。在相關產品設計朝向可攜性與低成本的前提下，非揮發性記憶體如何滿足前述的目標，將是一個重要的課題。 本篇論文以非重疊佈值N型金氧半場效電晶體通道擊穿效應為研究。以三種不同非揮發性記憶體元件包含LDD nMOS，NOI nMOS做比較，並且使用TSUPREM4和MEDICI軟體對該三種不同元件做製程及電性上的模擬分析與討論。

關鍵字

非揮發性記憶體 ； 擊穿效應

並列摘要

Memory development is an important indicator of the semiconductor industry. The process and performance improvement are always challenging topics. Non-Volatile Memories (NVMs) have been developed for decades, and received much attention in mobile and portable applications. For the purpose of portability and low cost in microelectronics to fulfill the above mentioned criteria is particularly important for NVMs.
In this thesis, Channel Punch Through Effects in Non-overlapped Implantation nMOSFET are studied. In order to compare three NVM devices including LDD nMOS and NOI nMOS. TCAD tools including TSUPREM4 and MEDICI are used to simulate these devices electrical and process properties.

並列關鍵字

Non-volatile memory(NVM) ； Punch Through Effect

參考文獻

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