化合物半導體奈米線金氧半結構之研製

Study of Compound Semiconductor Nanowire MOS Structures

盧永晟(Yong-Cheng Lu)

指導教授 ： 李明逵

中原大學/工學院/電子工程研究所/碩士(2014年)

https://doi.org/10.6840/cycu201400533

摘要

多閘極電晶體已成為最新的趨勢，傳統平面電晶體隨著尺寸持續微縮面臨短通道效應造成各種問題。多閘極電晶體利用立體的結構在源極和汲極之間形成立體線通道，使得元件擁有多面控制閘極的能力，改善閘極的控制力，有效的抑制短通道效應。本實驗利用電子束微影系統配合乾蝕刻研究III-V族基板奈米線的蝕刻特性，利用此特性蝕刻出多閘極電晶體的立體線結構，並將其製作成電容器量測其電性。

關鍵字

短通道效應，環繞式閘極電晶體，立體線，砷化鎵，乾蝕刻，電子束微影系統

並列摘要

Multiple gate devices have become the new trend, traditional bulk devices encounter many problems as the size continuously shrink due to short channel effect. Multiple gate devices have three dimensional wire structure and make devices more sides of gate. This improves the control ability of gate and effectively suppresses short channel effects. In this experiment, we observed different profiles of compound etching. Using the characteristics of electron beam lithography and dry etching to form the nanowires of multiple gate devices and then measure electronic characteristics of this structure.

並列關鍵字

Short channel effects ； nanowire ； electron beam lithography ； dry etching ； gallium arsenide ； GAAFET

參考文獻

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